We have studied lifetime instabilities in p-type boron-doped mono-like silicon during light soaking (LS) and dark annealing (DA) at different temperatures, and their behavior upon LS/DA cycling at various degradation and regeneration stages. Despite having similar capture cross section ratios, it is found that the defects responsible for the degradation under illumination and in the dark could stem from two separate reactions, with hydrogen being the common precursor. A model for light and elevated temperature induced degradation (LeTID) is presented based on our experimental findings. It is proposed that hydrogen atoms originally bound in the silicon nitride layer are released into the silicon bulk above a certain firing temperature, which then interact with some other species in the silicon bulk under illumination, causing the LeTID degradation. During the cooling ramp of the firing process or extended DA, hydrogen in the silicon bulk starts to effuse into the ambient, reducing the amount of hydrogen remaining in the silicon bulk, and correspondingly affecting their LeTID behavior. The proposed model provides new insights to help understand complex LeTID behaviors reported in the literature, including its dependence on the firing profile, sample thickness, dopant type, and DA pretreatment.

中文翻译：

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暗退火在光和高温诱导的 p 型类单晶硅降解中的作用

我们研究了 p 型掺硼单晶硅在不同温度下的光浸泡 (LS) 和暗退火 (DA) 期间的寿命不稳定性，以及它们在不同降解和再生阶段对 LS/DA 循环的行为。尽管具有相似的捕获截面比，但发现导致光照和黑暗中降解的缺陷可能源于两个独立的反应，氢是常见的前体。基于我们的实验结果，提出了光和高温诱导退化 (LeTID) 的模型。有人提出，最初结合在氮化硅层中的氢原子在高于某个烧制温度时释放到硅体中，然后在光照下与硅体中的一些其他物质相互作用，导致 LeTID 退化。在烧制过程或延长 DA 的冷却斜坡期间，硅块中的氢开始扩散到环境中，减少了硅块中剩余的氢量，并相应地影响了它们的 LeTID 行为。所提出的模型提供了新的见解，以帮助理解文献中报道的复杂 LeTID 行为，包括其对烧制曲线、样品厚度、掺杂剂类型和 DA 预处理的依赖。