Light trapping and current losses are critical factors for the performance of a solar cell. The analysis of the light trapping is generally carried out by the optical path length and back reflectance estimations using the inverse internal quantum efficiency (IQE) approach or the simulation methods. Simulation tools, such as PC1D or wafer ray tracers, provide an improved estimation as compared with the inverse IQE method but are time-consuming. Another approach for light trapping based on the statistical ray optics has been reported in earlier literature, providing a practical limit against the 4n2 limit. This approach has been studied and compared with the well-studied inverse IQE approach. It is further modified for application to the widely available silicon solar cell structures. Also, the current loss analysis has been carried out using the proposed method that separates the optical losses from the electrical losses in the long-wavelength range without the use of simulation. Further, the accuracy of back reflectance values determined using analytical methods, including the inverse IQE method, is examined using PC1D simulations and the current loss analysis.

中文翻译：

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晶体硅太阳能电池长波长区域的背反射和电流损耗分析

光捕获和电流损失是太阳能电池性能的关键因素。光捕获的分析通常通过使用逆内量子效率 (IQE) 方法或模拟方法的光路长度和背反射率估计来进行。与逆 IQE 方法相比，PC1D 或晶圆射线追踪器等模拟工具提供了改进的估计，但很耗时。另一种基于统计射线光学的光捕获方法已在早期文献中报道，提供了针对 4n2 限制的实际限制。这种方法已经过研究，并与经过充分研究的逆 IQE 方法进行了比较。它被进一步修改以应用于广泛可用的硅太阳能电池结构。还，电流损耗分析是使用所提出的方法进行的，该方法在不使用模拟的情况下将长波长范围内的光损耗与电损耗分开。此外，使用 PC1D 模拟和电流损耗分析检查使用分析方法（包括逆 IQE 方法）确定的背反射值的准确性。