The precursor reaction process for the fabrication of Cu(In,Ga)Se$_{2}$ solar cells potentially allows for low-cost fabrication and scalable processing for manufacturing. Additionally, this process has yielded record efficiencies in lab-scale experiments. Thus far, research on the precursor reaction method has been restricted to relatively low Ga compositions with Ga/(In+Ga) $\approx$ 25%. By increasing the ratio of Ga, it is possible to increase the bandgap, and thus, increase the open-circuit voltage. This work develops and characterizes the precursor reaction process for use with Ga/(In+Ga) $\approx$ 50%, with the goal of improving the open-circuit voltage and efficiency. It is shown that with an increased Ga ratio, increased ${V}_{\rm oc}$ is achieved, but the rate of conversion from the precursor to absorber phases is decreased. Additionally, increased Ga improves the film adhesion at increased selenization temperatures as well as improving the film morphology.

中文翻译：

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使用高 Ga Cu(In,Ga)(S,Se)$_{2}$ 的前体反应方法来实现增加的开路电压

Cu(In,Ga)Se的前驱体反应过程$_{2}$太阳能电池可能允许低成本制造和可扩展的制造工艺。此外，该过程在实验室规模的实验中取得了创纪录的效率。迄今为止，对前体反应方法的研究仅限于 Ga/(In+Ga)$\大约$25%。通过增加Ga的比例，可以增加带隙，从而增加开路电压。这项工作开发并表征了与 Ga/(In+Ga) 一起使用的前体反应过程$\大约$50%，目的是提高开路电压和效率。结果表明，随着 Ga 比的增加，${V}_{\rm oc}$达到了，但从前体到吸收剂相的转化率降低了。此外，增加的 Ga 提高了硒化温度下的膜附着力以及改善了膜形态。