Electrochemical deposition and thermoelectric characterisation of a semiconducting 2-D metal–organic framework thin film,Journal of Materials Chemistry A

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Electrochemical deposition and thermoelectric characterisation of a semiconducting 2-D metal–organic framework thin film
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2020-06-19 , DOI: 10.1039/d0ta04939e
Maria de Lourdes Gonzalez-Juarez _{1,

2,

3,

4} , Eduardo Flores _{5,

6} , Marisol Martin-Gonzalez _{5,

6} , Iris Nandhakumar _{1,

2,

3,

4} , Darren Bradshaw _{1,

2,

3,

4}

Affiliation

The electrical conductivity and porosity of the 2-dimensional metal–organic framework Cu₃(2,3,6,7,10,11-hexahydroxytriphenylene)₂ [Cu₃(HHTP)₂] make it a promising candidate for thermoelectric applications. In this work, we report the electrochemical synthesis of Cu₃(HHTP)₂ films by an anodization approach and an evaluation of its thermoelectric properties. The electrochemically synthesised Cu₃(HHTP)₂ thin films were transferred using a wet chemical method in order to perform electrical measurements. We are reporting the first thermoelectric measurements of this framework both in bulk and thin film form which resulted in Seebeck coefficients of −7.24 μV K⁻¹ and −121.4 μV K⁻¹ with a power factor of 3.15 × 10⁻³ μW m⁻¹ for the film respectively. The negative Seebeck coefficients suggest that Cu₃(HHTP)₂ behaves as an n-type semiconductor. Since the introduction of conductive MOFs in electronic devices is at an early stage of development, we believe this work validates the use of electrochemical synthetic routes of conducting MOFs to further investigate and expand their applications in thin film technologies.

中文翻译：

半导体二维金属有机骨架薄膜的电化学沉积和热电表征

2维金属-有机骨架的导电性和多孔的Cu ₃（2,3,6,7,10,11-六羟基）₂ [的Cu ₃（HHTP）₂ ]，使其成为热电应用的有希望的候选。在这项工作中，我们报告了通过阳极氧化方法对Cu ₃（HHTP）₂薄膜进行电化学合成及其热电性能的评估。电化学合成的Cu ₃（HHTP）₂为了进行电学测量，使用湿化学方法转移薄膜。我们报告都在散装和薄膜形式这个框架的第一热电测量其导致的-7.24μVķ塞贝克系数^-1和-121.4μVķ ^-1具有3.15×10的功率因子^-3 μW米^-1分别为电影。塞贝克系数为负值表明Cu ₃（HHTP）₂表现为n型半导体。由于将导电MOF引入电子设备尚处于发展的早期阶段，因此我们认为这项工作验证了导电MOF的电化学合成路线的使用，以进一步研究和扩展其在薄膜技术中的应用。

更新日期：2020-07-07

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