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Correlated Exciton Fluctuations in a Two-Dimensional Semiconductor on a Metal.
Nano Letters ( IF 9.6 ) Pub Date : 2020-06-19 , DOI: 10.1021/acs.nanolett.0c00756 Rasmus H Godiksen 1, 2 , Shaojun Wang 1, 2, 3 , T V Raziman 1, 2 , Marcos H D Guimaraes 1, 4 , Jaime Gómez Rivas 1, 2, 3 , Alberto G Curto 1, 2
Nano Letters ( IF 9.6 ) Pub Date : 2020-06-19 , DOI: 10.1021/acs.nanolett.0c00756 Rasmus H Godiksen 1, 2 , Shaojun Wang 1, 2, 3 , T V Raziman 1, 2 , Marcos H D Guimaraes 1, 4 , Jaime Gómez Rivas 1, 2, 3 , Alberto G Curto 1, 2
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Excitons in nanoscale materials can exhibit fluorescence fluctuations. Intermittency is pervasive in zero-dimensional emitters such as single molecules and quantum dots. In contrast, two-dimensional semiconductors are generally regarded as stable light sources. Noise contains, however, valuable information about a material. Here, we demonstrate fluorescence fluctuations in a monolayer semiconductor due to sensitivity to its nanoscopic environment focusing on the case of a metal film. The fluctuations are spatially correlated over tens of micrometers and follow power-law statistics, with simultaneous changes in emission intensity and lifetime. At low temperatures, an additional spectral contribution from interface trap states emerges with fluctuations that are correlated with neutral excitons and anticorrelated with trions. Mastering exciton fluctuations has implications for light-emitting devices such as single-photon sources and could lead to novel excitonic sensors. The quantification of fluorescence fluctuations, including imaging, unlocks a set of promising tools to characterize and exploit two-dimensional semiconductors and their interfaces.
中文翻译：
金属上二维半导体中的相关激子涨落。
纳米级材料中的激子可表现出荧光波动。间歇性普遍存在于零维发射体中，例如单分子和量子点。相反，二维半导体通常被认为是稳定的光源。但是，噪声包含有关材料的宝贵信息。在这里，我们重点研究金属膜的情况下，由于对纳米环境的敏感性，证明了单层半导体中的荧光波动。波动在数十微米上与空间相关，并且遵循幂律统计，同时发射强度和寿命会发生变化。在低温下，来自界面陷阱态的附加光谱贡献随波动而出现，该波动与中性激子相关，而与三子反相关。掌握激子波动对诸如单光子源之类的发光设备有影响，并可能导致新型激子传感器。包括成像在内的荧光波动的量化，开辟了一套有前途的工具来表征和利用二维半导体及其界面。
更新日期：2020-07-08
中文翻译：
金属上二维半导体中的相关激子涨落。
纳米级材料中的激子可表现出荧光波动。间歇性普遍存在于零维发射体中，例如单分子和量子点。相反，二维半导体通常被认为是稳定的光源。但是，噪声包含有关材料的宝贵信息。在这里，我们重点研究金属膜的情况下，由于对纳米环境的敏感性，证明了单层半导体中的荧光波动。波动在数十微米上与空间相关，并且遵循幂律统计，同时发射强度和寿命会发生变化。在低温下，来自界面陷阱态的附加光谱贡献随波动而出现，该波动与中性激子相关，而与三子反相关。掌握激子波动对诸如单光子源之类的发光设备有影响，并可能导致新型激子传感器。包括成像在内的荧光波动的量化，开辟了一套有前途的工具来表征和利用二维半导体及其界面。
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