Electrical injection of spin-polarized electrons from ferromagnets into semiconductors has been generally demonstrated through a tunneling process with insulator barrier layers that can dominate the device performance, including the electric power at the electrodes. Here, we show an efficient spin injection technique for a semiconductor using an atomically controlled ferromagnet/ferromagnet/semiconductor heterostructure with low-resistive Schottky-tunnel barriers. On the basis of symmetry matching of the electronic bands between the top highly spin-polarized ferromagnet and the semiconductor, the magnitude of the spin signals in lateral spin-valve devices can be enhanced by up to one order of magnitude compared to those obtained with conventional ferromagnet/semiconductor structures. This approach provides a new solution for the simultaneous achievement of highly efficient spin injection and low electric power at the electrodes in semiconductor devices, leading to novel semiconductor spintronic architectures at room temperature.

通常已经通过具有绝缘体阻挡层的隧穿过程证明了自铁磁体将自旋极化电子电注入半导体中，该绝缘体阻挡层可以控制器件的性能，包括电极上的电能。在这里，我们展示了一种高效的自旋注入技术，该技术使用了具有低电阻肖特基隧道势垒的原子控制铁磁体/铁磁体/半导体异质结构。根据顶部高度自旋极化的铁磁体和半导体之间的电子带的对称匹配，与传统方法相比，横向自旋阀装置中的自旋信号的幅度可以提高一个数量级。铁磁体/半导体结构。