Grating structures of the same grating period and similar ridge widths and heights are fabricated at the air interface of highly Ga‐doped ZnO (GaZnO) thin films of different thicknesses for studying the different resonance behaviors of induced surface plasmon (SP) polariton and localized SP in the near‐IR range. The wavelengths of those SP resonance modes obtained via the reflection and transmission measurements from the air and substrate sides are compared for observing the effects of the GaZnO/substrate interface on the behaviors of the SP resonances induced around the grating structures. With the refractive index of the sapphire substrate around 1.75, the resonance wavelengths of the SP modes induced in a sample of a smaller GaZnO film thickness generally become longer. This variation trend can be clearly observed in the reflection measurement from the sapphire side. Therefore, the SP resonance wavelengths of a GaZnO grating structure can be controlled by the refractive index of the used substrate as long as the GaZnO layer is not too thick (roughly thin than 200 nm).

中文翻译：

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高Ga掺杂ZnO光栅结构下表面等离子体共振行为的膜厚依赖性

在不同厚度的高掺杂Ga的ZnO（GaZnO）薄膜的空气界面处，制造出具有相同光栅周期和相似脊宽和高度的光栅结构，以研究诱导表面等离子体激元（SP）极化和局部SP的不同共振行为。在近红外范围内。比较通过空气和衬底侧的反射和透射测量获得的那些SP共振模式的波长，以观察GaZnO /衬底界面对光栅结构周围感应的SP共振行为的影响。蓝宝石衬底的折射率约为1.75时，在GaZnO膜厚度较小的样品中引起的SP模式的共振波长通常会变长。从蓝宝石侧的反射测量中可以清楚地观察到这种变化趋势。因此，只要GaZnO层不是太厚（大约小于200nm），就可以通过所使用的基板的折射率来控制GaZnO光栅结构的SP共振波长。