In this work, we have demonstrated a FET-like ammonia (NH₃) gas sensor fabricated on a unique structure namely GaN honeycomb nanonetwork (GaN-HN) which is in-plane electrically conductive together with large surface-to-volume ratio. Utilizing ohmic contact Ti/Al/Ti/Au multilayers as the source and the drain terminals and Pt nanonetwork layer as the gate terminal, the FET-like NH₃ gas sensors were fabricated by a two-mask photolithography process. The fabricated NH₃ gas sensors have high selectivity, fast response/recovery, and a wide detection range up to 5000 ppm. The response and recovery time for 5 ppm NH₃ gas are 23 s and 101 s at a moderate operating temperature of 120 °C. Interestingly, this sensor is capable to detect trace NH₃ gas and the low limit of detection (LOD) is as small as 0.31 ppm. Its absorption activation energy E_a is also investigated by the transient-state study.

在这项工作中，我们已经证明了在独特的结构（即GaN蜂窝纳米网络（GaN-HN））上制造的类似FET的氨（NH ₃）气体传感器，该结构具有面内导电性以及大的体积比。利用欧姆接触Ti / Al / Ti / Au多层作为源极和漏极端子，并以Pt纳米网络层作为栅极端子，通过双掩模光刻工艺制造了类似FET的NH ₃气体传感器。制成的NH ₃气体传感器具有高选择性，快速响应/回收率和高达5000 ppm的宽检测范围。在120°C的中等工作温度下，5 ppm NH ₃气体的响应时间和恢复时间分别为23 s和101 s。有趣的是，该传感器能够检测痕量NH_3种气体，检测下限（LOD）低至0.31 ppm。还通过瞬态研究来研究其吸收活化能E _a。