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Laser induced the tunable permittivity of Epsilon-Near-Zero induced in indium tin oxide thin films
Optical Materials ( IF 3.8 ) Pub Date : 2020-09-01 , DOI: 10.1016/j.optmat.2020.110137
Ruijin Hong , Tingzhen Yan , Chunxian Tao , Qi Wang , Hui Lin , Dawei Zhang

Abstract Tunable permittivity of Epsilon-Near-Zero (ENZ) of ITO thin films were realized by Nd: YAG pulse laser irradiation. The effects of different pulsed laser power irradiation on the structure, morphology and optical properties of the samples were investigated via X-ray diffraction, atomic force microscopy, UV-VIS-NIR double beam spectrometer, spectroscopic ellipsometry and Raman system, respectively. Those results indicate that pulse laser irradiation has the effects on the preferential orientation and the permittivity wavelength region of ENZ from 1137 to 2001 nm. The variations of Raman spectra further confirms that the laser irradiation can induce some defects driving the special optical characteristics of ITO films. In addition, the results of Finite-Difference Time-Domain are in good agreement with those of the experiments.

中文翻译:

激光诱导氧化铟锡薄膜中 Epsilon-近零诱导的可调介电常数

摘要 通过Nd:YAG脉冲激光辐照实现了ITO薄膜的ε-近零(ENZ)介电常数可调。分别通过X射线衍射、原子力显微镜、UV-VIS-NIR双光束光谱仪、光谱椭偏仪和拉曼系统研究了不同脉冲激光功率照射对样品结构、形貌和光学性质的影响。这些结果表明脉冲激光辐照对ENZ的优先取向和介电常数波长范围从1137nm到2001nm有影响。拉曼光谱的变化进一步证实了激光照射会导致一些缺陷驱动 ITO 薄膜的特殊光学特性。此外,有限差分时域的结果与实验的结果非常吻合。
更新日期:2020-09-01
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