GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive strain to enhance the transport properties. Here, we for the first time demonstrate epitaxial GaSb-GaAs_xSb_1−x core-shell nanowires with a compressively strained core. Both axial and hydrostatic strain in GaSb core have been measured by X-ray diffraction (XRD) and Raman scattering, respectively. The optimal sample, almost without plastic relaxation, has an axial strain of −0.88% and a hydrostatic strain of −1.46%, leading to a noticeable effect where the light hole band is calculated to be 33.4 meV above the heavy hole band at the Γ-point. This valence band feature offers more light holes to contribute the transport process, and thus may provide enhanced hole mobility by reducing both the interband scattering and the hole effective mass. Our results show that lattice-mismatched epitaxial core-shell heterostructures of high quality can also be realized in the promising yet demanding GaSb-based system.

围绕栅极的几何形状的基于GaSb的纳米线是二元p型晶体管的理想选择，但是，它们需要引入压缩应变以增强传输性能。在这里，我们首次展示了外延GaSb-GaAs _x Sb ₁ - _x具有压缩应变核的核-壳纳米线。分别通过X射线衍射（XRD）和拉曼散射测量了GaSb核心的轴向应变和静应变。最佳样品几乎没有塑性松弛，其轴向应变为-0.88％，流体静应变为-1.46％，导致显着的效果，其中计算出的轻孔带在Γ处比重孔带高33.4 meV。 -点。价带特征提供了更多的轻空穴以有助于传输过程，因此可以通过减少带间散射和空穴有效质量来提供增强的空穴迁移率。我们的结果表明，在有前途但要求很高的基于GaSb的系统中，也可以实现高质量的晶格不匹配的外延核-壳异质结构。