Here, several classes of magneto-electric devices, and their possible implementations as complementary metal-oxide-semiconductor (CMOS) replacements, are discussed. We consider how these devices can provide considerable improvements in functionality over CMOS when employed in novel circuit architectures. In the context of the magneto-electric device technologies discussed here, we detail the expansion of benchmarking into some of the newer beyond-CMOS technologies. This has required circuit level simulations, using Cadence Spectre or Spice, and Verilog-A based models of the magneto-electric magnetic tunnel junction devices have been used for circuit validation. This has been done as part of a global effort to develop comparative benchmarking standards across logic families, even as new benchmarking methodologies are being developed, while maintaining the familiar CMOS benchmarks.

中文翻译：

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不断发展的磁电设备技术

在此，讨论了几种类型的磁电设备及其作为互补金属氧化物半导体（CMOS）替代产品的可能实现方式。我们考虑这些器件在新颖的电路体系结构中使用时，如何比CMOS显着改善功能。在这里讨论的磁电器件技术的背景下，我们详细介绍了将基准测试扩展到一些较新的超越CMOS技术的方法。这需要使用Cadence Spectre或Spice进行电路级仿真，并且已使用基于Verilog-A的磁电磁隧道结器件模型进行电路验证。这是在全球范围内开发跨逻辑系列比较基准测试标准的一部分，即使正在开发新的基准测试方法，