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Indium-modified Ga2O3 hierarchical nanosheets as efficient photocatalysts for the degradation of perfluorooctanoic acid
Environmental Science: Nano ( IF 5.8 ) Pub Date : 2020-06-18 , DOI: 10.1039/d0en00259c
Xianjun Tan 1, 2, 3, 4, 5 , Guanhan Chen 5, 6, 7, 8 , Dingyu Xing 5, 6, 7, 8 , Wenhui Ding 1, 2, 3, 4, 5 , Hao Liu 5, 6, 7, 8 , Ting Li 5, 8, 9 , Yuxiong Huang 1, 2, 3, 4, 5
Affiliation  

More and more attention has been redirected to per- and polyfluorinated alkyl substances (PFASs), particularly perfluorooctanoic acid (PFOA), owing to their ecotoxicity and environmental risks. As one of the major emerging and persistent contaminants in the environment, the current treatment processes could not remove PFOA efficiently. The recent advances in heterogeneous photocatalysis have demonstrated high efficiencies in degrading persistent contaminants, which provides an alternative approach for PFOA removal. Notably, Ga2O3-based photocatalysts exhibited great potential for PFOA remediation due to their high oxidizing capability and energy sustainability. Thus, Ga2O3 hierarchical nanosheets modified by a series of transition metals were rationally developed, and applied as heterogeneous photocatalysts for fast and efficient PFOA degradation. Noteworthily, the indium modified Ga2O3 hierarchical nanosheets achieved prominent PFOA decomposition activity, which can completely degrade 20 mg L−1 PFOA within 1 hour. The In–Ga2O3 hierarchical composites have dramatically enhanced the degradation kinetics for PFOA, which was 7.8 times higher than that of pristine Ga2O3. With in-depth mechanism investigation, we have demonstrated that In modification can not only enhance light harvesting and suppress photogenerated carrier recombination, but also favor the improvement of the adsorption ability for PFOA through the coexistence of monodentate and bidentate/bridging coordination modes. The transition metals–modification strategy paves the way for fabricating high-performance nanoscale photocatalysts for the removal of PFASs in water.

中文翻译:

铟改性的Ga2O3分层纳米片可作为降解全氟辛酸的有效光催化剂

由于全氟和多氟烷基物质(PFAS)的生态毒性和环境风险,它们已越来越受到关注,特别是全氟辛酸(PFOA)。作为环境中主要的新兴污染物和持久性污染物之一,当前的处理工艺无法有效去除PFOA。异质光催化的最新进展表明,在降解持久性污染物方面具有很高的效率,这为去除PFOA提供了另一种方法。明显地,基于Ga 2 O 3的光催化剂由于其高氧化能力和能量可持续性而显示出用于PFOA的巨大潜力。因此,Ga 2 O 3合理开发了由一系列过渡金属修饰的多级纳米片,并将其用作非均相光催化剂,可快速有效地降解PFOA。值得注意的是,铟修饰的Ga 2 O 3分级纳米片具有出色的PFOA分解活性,可以在1小时内完全降解20 mg L -1 PFOA。In-Ga 2 O 3分层复合材料显着增强了PFOA的降解动力学,是原始Ga 2 O 3的7.8倍。。通过深入的机理研究,我们证明了In修饰不仅可以增强集光并抑制光生载流子的重组,而且通过单齿和双齿/桥键配位模式的共存,有利于提高PFOA的吸附能力。过渡金属改性策略为制造用于去除水中PFAS的高性能纳米级光催化剂铺平了道路。
更新日期:2020-08-14
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