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An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-06-17 , DOI: 10.1002/aelm.202000010 Jinsun Kim 1 , Yuriy V. Pershin 1 , Ming Yin 2 , Timir Datta 1 , Massimiliano Di Ventra 3
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-06-17 , DOI: 10.1002/aelm.202000010 Jinsun Kim 1 , Yuriy V. Pershin 1 , Ming Yin 2 , Timir Datta 1 , Massimiliano Di Ventra 3
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It has been suggested that all resistive‐switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed to determine whether a given physical system is indeed a memristor or not. Here, such a test is experimentally applied to both in‐house fabricated Cu‐SiO2 and commercially available electrochemical metallization cells. The results unambiguously show that electrochemical metallization memory cells are not memristors. Since the particular resistance‐switching memories employed in the study share similar features with many other memory cells, the findings refute the claim that all resistance‐switching memories are memristors. They also cast doubts on the existence of ideal memristors as actual physical devices that can be fabricated experimentally. The results then lead to formulate two memristor impossibility conjectures regarding the impossibility of building a model of physical resistance‐switching memories based on the memristor model.
中文翻译：
实验证明电阻切换存储单元不是忆阻器
有人建议所有的电阻开关存储单元都是忆阻器。后者是假设的理想器件，其电阻（最初制定）仅取决于穿过它们的净电荷。最近，已经提出了明确的测试来确定给定的物理系统是否确实是忆阻器。在这里，这种测试通过实验应用于内部制造的Cu-SiO 2和市售的电化学金属化电池。结果清楚地表明，电化学金属化存储单元不是忆阻器。由于这项研究中使用的特定电阻切换存储器与许多其他存储单元具有相似的功能，因此该发现驳斥了所有电阻切换存储器都是忆阻器的说法。他们还对理想忆阻器作为可以通过实验制造的实际物理器件的存在表示怀疑。然后，结果导致就无法建立基于忆阻器模型的物理电阻切换存储器模型，提出了两个忆阻器不可能猜想。
更新日期：2020-07-13
中文翻译：
实验证明电阻切换存储单元不是忆阻器
有人建议所有的电阻开关存储单元都是忆阻器。后者是假设的理想器件，其电阻（最初制定）仅取决于穿过它们的净电荷。最近，已经提出了明确的测试来确定给定的物理系统是否确实是忆阻器。在这里，这种测试通过实验应用于内部制造的Cu-SiO 2和市售的电化学金属化电池。结果清楚地表明，电化学金属化存储单元不是忆阻器。由于这项研究中使用的特定电阻切换存储器与许多其他存储单元具有相似的功能，因此该发现驳斥了所有电阻切换存储器都是忆阻器的说法。他们还对理想忆阻器作为可以通过实验制造的实际物理器件的存在表示怀疑。然后，结果导致就无法建立基于忆阻器模型的物理电阻切换存储器模型，提出了两个忆阻器不可能猜想。
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