Abstract Graphene nanoribbons (GNRs) are an emerging material for future nanoelectronic applications. Because GNR fabrication technology is still in an early stage, modelling of GNR field-effect transistors (GNRFETs) is significant for evaluating the performance metrics of these devices. In this study, the charge transport properties of double-gate monolayer GNRFETs with various channel widths and lengths and doped contacts are investigated. The Hamiltonian matrix of the device is derived using the nearest-neighbour tight-binding method. The self-consistent solutions of the Poisson and Schrodinger equations are obtained within a recursive non-equilibrium Green's function formalism using the successive over-relaxation method to reduce the time required for the simulation. The effects of channel length and width of the device on the electronic transport properties such as the total density of states, transmission coefficient, energy-resolved current spectrum, and current–voltage characteristics are investigated. The performance metrics of the device, including the subthreshold swing, drain-induced barrier lowering (DIBL), threshold voltage, and on/off current ratio, are computed. It is found that for narrower and longer devices, the subthreshold swing and DIBL decrease, whereas the on/off current ratio increases. In addition, when the width index is in the 3p + 1 family, the device exhibits better switching performance. 7-armchair GNRFETs at 7 nm exhibits an outstanding subthreshold swing of ~67 mV/dec and a DIBL of ~54 mV/V. Thus, the narrower and longer device is less affected by short-channel effects, and the lower leakage current during the off state enables better switching performance, making it a potential candidate for future nanoelectronic applications in low-power design.

中文翻译：

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使用递归非平衡格林函数方法的原始石墨烯纳米带场效应晶体管中电流传输的性能指标

摘要 石墨烯纳米带（GNRs）是未来纳米电子应用的新兴材料。由于 GNR 制造技术仍处于早期阶段，GNR 场效应晶体管 (GNRFET) 的建模对于评估这些器件的性能指标具有重要意义。在这项研究中，研究了具有各种沟道宽度和长度以及掺杂触点的双栅单层 GNRFET 的电荷传输特性。设备的哈密顿矩阵是使用最近邻紧束缚方法导出的。Poisson 和 Schrodinger 方程的自洽解是在递归非平衡格林函数形式中获得的，使用连续过松弛方法来减少模拟所需的时间。研究了器件的沟道长度和宽度对电子传输特性的影响，例如总态密度、传输系数、能量分辨电流谱和电流-电压特性。计算器件的性能指标，包括亚阈值摆幅、漏极感应势垒降低 (DIBL)、阈值电压和开/关电流比。发现对于更窄和更长的器件，亚阈值摆幅和 DIBL 降低，而开/关电流比增加。此外，当宽度指数在 3p+1 族中时，器件表现出更好的开关性能。7 nm 的 7-armchair GNRFET 表现出出色的亚阈值摆幅~67 mV/dec 和~54 mV/V 的 DIBL。因此，更窄和更长的器件受短沟道效应的影响较小，