Abstract Transparent p-type potassium-doped ZnO (KZO) thin films are fabricated by a simple and effective approach of molten-salt treatment (MST) in KNO3 for ZnO thin films, to further fabricating p-n homojunction KZO/ZnO thin films with one-step method. XRD and PL results show the influence of MST on ZnO crystal, especially on the grain size. The transmittance of KZO/ZnO thin films has been slightly improved in visible-light region. Notably, after MST at 400 °C, hall-effect test reveals that the carrier type successfully transfers to p-type, and I-V curve hints that the p-n homojunction KZO/ZnO could be considered formed. Meanwhile, TEM, SIMS and XPS results reveal that K has doped into KZO thin films, resulting in the generated p-type carriers.

中文翻译：

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一种简单有效的制备透明 pn 同质结 KZO/ZnO 薄膜的方法

摘要 通过在 KNO3 中对 ZnO 薄膜进行熔盐处理 (MST) 的一种简单有效的方法制备透明的 p 型掺钾 ZnO (KZO) 薄膜，以进一步制备 pn 同质结 KZO/ZnO 薄膜与单-步法。XRD和PL结果表明MST对ZnO晶体的影响，特别是对晶粒尺寸的影响。KZO/ZnO薄膜在可见光区的透射率略有提高。值得注意的是，在 400 °C 进行 MST 后，霍尔效应测试表明载流子类型成功转移到 p 型，IV 曲线暗示可以认为形成 pn 同质结 KZO/ZnO。同时，TEM、SIMS 和 XPS 结果表明 K 已掺杂到 KZO 薄膜中，从而产生了 p 型载流子。