The nano-Ag paste consisted of Ag nanoparticles and organic solvents. These organics would be removed by evaporation or decomposition during sintering. When the sintering temperature was 300 °C, the resistivity of sintered bulk was 8.35 × 10⁻⁶ Ω cm, and its thermal conductivity was 247 W m⁻¹ K⁻¹. The Si/SiC chips and direct bonding copper (DBC) substrates could be bonded by this nano-Ag paste at low temperature. The bonding interface, sintered microstructure and shear strength of Si/SiC chip attachment were investigated by scanning electron microscopy, transmission electron microscopy and shear tests. Results showed that the sintered Ag layer was porous structure and tightly adhered to the electroless nickel immersion gold surface of DBC substrate and formed the continuous Ag–Au interdiffusion layer. The shear strength of Si and SiC chip attachments was higher than 35 MPa when the sintering pressure was 10 MPa. The fracture occurred inside the sintered Ag layer, and the fracture surface had obvious plastic deformation.

纳米银浆由银纳米颗粒和有机溶剂组成。这些有机物将在烧结过程中通过蒸发或分解而去除。烧结温度为300℃时，烧结块的电阻率为8.35×10 ^-6Ωcm，热导率为247Wm ^-1 K ^-1。。Si / SiC芯片和直接键合铜（DBC）基板可以在低温下通过这种纳米银浆键合。通过扫描电子显微镜，透射电子显微镜和剪切试验研究了Si / SiC芯片连接的界面，烧结组织和剪切强度。结果表明，烧结后的Ag层为多孔结构，紧密附着在DBC衬底的化学镀镍金表面，形成连续的Ag-Au互扩散层。当烧结压力为10 MPa时，Si和SiC芯片附件的剪切强度高于35 MPa。断裂发生在烧结的Ag层内部，并且断裂表面具有明显的塑性变形。