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Design and analysis of a multi-finger dual-direction SCR discharging electro-static current in a gradual transition manner
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-06-16 , DOI: 10.1088/1361-6641/ab8994
Dandan Jia 1, 2 , Yang Wang 1, 2 , Xijun Chen 1, 2 , Zhanying Bao 1, 2 , Jun Lu 1, 2 , Peng Dong 3
Affiliation  

In order to seek an electro-static discharge with higher failure current per unit area and latch-up immunity, a novel multi-finger dual-direction silicon controlled rectifier (DDSCR) using the 0.5 μ m complementary and double-diffusion metal-oxide-semiconductor technology was proposed. The working principle of the device is analyzed by using equivalent circuit and technology computer aided design simulation. From the test result of the transmission line pulse testing system we can see that the holding voltages for the traditional dual-direction silicon controlled rectifiers with a single-finger and two-fingers are 11.34 V and 7.63 V, respectively, which is decreased as the number of fingers increases. The holding voltage of the proposed device is 12.2 V, which is higher than that of the traditional 2-finger DDSCR and suitable for communication interface high voltage electrostatic discharge (ESD) protection. Furthermore, the influence of some dimensions, fingers and total f...

中文翻译:

一种多指双向SCR逐步释放静电电流的设计与分析

为了寻求具有更高的单位面积故障电流和抗闩锁性的静电放电,一种新颖的多指双向可控硅整流器(DDSCR)使用0.5μm互补和双扩散金属氧化物-提出了半导体技术。通过等效电路和计算机辅助设计仿真技术,分析了该器件的工作原理。从传输线脉冲测试系统的测试结果可以看出,传统的单指和双指双向硅控整流器的保持电压分别为11.34 V和7.63 V,随着手指数增加。拟议器件的保持电压为12.2 V,它高于传统的2指DDSCR,适用于通信接口的高压静电放电(ESD)保护。此外,某些尺寸,手指和总手指的影响...
更新日期:2020-06-17
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