Thin‐film heterostructures are effective in enhancing the performance or triggering novel physical phenomena of optoelectronic applications. For example, the epitaxial heterostructures of ultraviolet‐light‐sensitive TiO₂ with metallic SrRuO₃ can acquire visible‐light functionalities using the hot carrier injection mechanism. Therefore, the TiO₂/SrRuO₃ heterostructure system has recently attracted increasing interest. Herein, the amorphous‐TiO₂/SrRuO₃ heterostructure is fabricated and compared to the epitaxial TiO₂/SrRuO₃. As opposed to the occurrence of the visible‐light photovoltaic effect in the epitaxial TiO₂/SrRuO₃, the amorphous‐TiO₂/SrRuO₃ heterostructure herein exhibits different optoelectronic functionality, specifically the photoresistor behavior. The amorphous‐TiO₂/SrRuO₃ heterostructure achieves a photoresponsivity of 6.56 A W⁻¹ at 1 V. Such a performance is hardly obtained in typical oxide‐based photoresistors. The analyses of the crystalline and electronic structures show that it is due to the defect‐induced high electron doping in the amorphous TiO₂ with hot carrier injection mechanism. This study discusses the correlation between the hot carrier injection and band diagram, which provides more degrees of freedom in designing potential optoelectronic devices.

中文翻译：

---

TiO2 / SrRuO3非晶异质结构中的大光响应性

薄膜异质结构可以有效地提高性能或触发光电应用中的新型物理现象。例如，具有金属SrRuO ₃的紫外线敏感TiO ₂的外延异质结构可以通过热载流子注入机制获得可见光功能。因此，TiO ₂ / SrRuO ₃异质结构体系近来引起了越来越多的兴趣。在此，制造了非晶-TiO ₂ / SrRuO ₃异质结构，并将其与外延TiO ₂ / SrRuO _{3进行比较}。与在外延TiO _2中发生可见光光伏效应相反/ SrRuO ₃，这里的非晶-TiO ₂ / SrRuO ₃异质结构表现出不同的光电功能，特别是光敏电阻的行为。非晶态TiO ₂ / SrRuO ₃异质结构在1 V时可实现6.56 A W ^-1的光响应性。在典型的基于氧化物的光敏电阻中很难获得这种性能。对晶体和电子结构的分析表明，这是由于非晶态TiO _2中缺陷引起的高电子掺杂所致具有热载流子注入机制。这项研究讨论了热载流子注入和能带图之间的相关性，这为设计潜在的光电器件提供了更大的自由度。