A novel structure of polarization beam splitter (PBS) using hybrid slot structure (HSS) consisting of horizontal/vertical slot waveguide (H/VSW) is proposed and characterized. A silicon nitride augmented low index guiding (ALIG) is employed to improve the performances of PBS device. TE mode is well confined in VSW formed by bottom silicon layers, and is transmitted through bar port, while TM mode is strongly cross-coupled to the adjacent waveguide and is directed to cross port by an asymmetric directional coupler (ADC). The results demonstrate a compact device with 4.05 μm coupling length, low insertion loss (IL) of 0.92 dB(0.55 dB), low crosstalk (XT) of −47.9 dB(−43.6 dB) for TM(TE) mode at 1.55 μm. To keep XT<−35 dB, a 44 nm bandwidth is obtained for TM mode from 1.533 μm to 1.577 μm while XT of TE mode is below −35 only if λ<1.62 μm.

提出并表征了一种由水平/垂直缝隙波导（H / VSW）组成的混合缝隙结构（HSS）的偏振分束器（PBS）的新型结构。氮化硅增强的低折射率引导（ALIG）被用来改善PBS装置的性能。TE模式很好地局限在由底部硅层形成的VSW中，并通过条形端口传输，而TM模式则强烈交叉耦合到相邻的波导，并通过非对称定向耦合器（ADC）定向到交叉端口。结果表明，紧凑型器件的耦合长度为4.05μm，在1.55μm的TM（TE）模式下具有0.92 dB（0.55 dB）的低插入损耗（IL），-47.9 dB（-43.6 dB）的低串扰（XT）。为了保持XT <-35 dB，对于TM模式，从1.533μm到1.577μm获得44 nm带宽，而TE模式的XT低于-仅当λ<1.62μm时才35。