Since Rare-Earth (RE) doped Gallium Nitride (GaN) is expected to be used as electrically driven single photon source at room temperature, low dose RE-ion implantation and their activation as luminescent centers are of interest. This paper reports photoluminescence (PL) properties of Praseodymium (Pr) implanted GaN at different temperatures ranging from room temperature to 1200 °C. All the Pr-implanted GaN samples are thermally annealed after implantation and show strong PL emissions at 650.2 nm and 652.0 nm, originated from ³P₀→³F₂ transition in 4f-shell of Pr³⁺ ions. It is shown that the PL intensity originating from Pr³⁺ ions is reduced as the implantation temperature increases for the Pr-implanted samples annealed at 1200 °C. This result suggests that Pr³⁺ ions quench due to the formation of complex defects and defect clusters. The effect of high temperature implantation on the recovery of GaN crystallinity is discussed in terms of critical dose and displacement damage.

由于稀土（RE）掺杂的氮化镓（GaN）有望在室温下用作电驱动的单光子源，因此低剂量RE离子注入及其作为发光中心的活化受到关注。本文报道了Pra（Pr）注入的GaN在室温至1200°C的不同温度下的光致发光（PL）特性。所有植入Pr的GaN样品在植入后均经过热退火，并在650.2 nm和652.0 nm处显示出强大的PL发射，这是由于Pr ³⁺离子在4f壳中的³ P ₀ → ³ F ₂跃迁引起的。结果表明，PL强度来源于Pr ³⁺随着在1200°C退火的Pr注入样品的注入温度升高，离子减少。该结果表明，Pr ³⁺离子由于形成复杂的缺陷和缺陷簇而猝灭。从临界剂量和位移损伤的角度讨论了高温注入对GaN结晶度恢复的影响。