To enhance the mechanical reliability without sacrificing the electrical conductivity of the flexible electronics, in this work submicron-thick Cu/Au/PI (CAP) and graphene/Cu/Au/PI (GCAP) films were fabricated successfully by using a series of assembly methods through introducing a graphene passivation layer onto the polyimide (PI)-supported Cu film surface, and a nanoscale gold (Au) interlayer between the Cu/PI interface. Tensile testing results reveal that the yield strength, the fracture strain and the electrical properties of the GCAP film were improved simultaneously. Furthermore, the GCAP film also exhibited a higher fatigue strength than the CAP film. The basic mechanism is mainly attributed to the effective suppression of the Cu/graphene interface on the fatigue extrusion formation through constraining dislocation motion.

为了在不牺牲柔性电子元件导电性的情况下提高机械可靠性，在这项工作中，通过一系列组装成功地制造了亚微米级的Cu / Au / PI（CAP）和石墨烯/ Cu / Au / PI（GCAP）膜。通过将石墨烯钝化层引入聚酰亚胺（PI）支撑的Cu膜表面以及在Cu / PI界面之间形成纳米级金（Au）中间层的方法。拉伸试验结果表明，GCAP薄膜的屈服强度，断裂应变和电性能同时提高。此外，GCAP膜还显示出比CAP膜更高的疲劳强度。其基本机理主要归因于通过限制位错运动有效地抑制了疲劳挤压形成过程中的Cu /石墨烯界面。