Abstract The preparation of multicrystalline silicon ingots with different boron-gallium doping ratio was studied in this work. The resistivity distribution, minority carrier lifetime, photoelectric conversion efficiency and light-induced degradation ratio were analyzed and compared. The results showed that with the increase of gallium doping ratio, the minority carrier lifetime of ingot and the conversion efficiency of silicon wafers were both decreased, at the same time the light-induced degradation ratio was decreased obviously, but it was not proportional to gallium concentration, By comparing the impurities concentration, it was preliminarily inferred that the impurities of copper and iron may also affect the light-induced degradation. Based on the performance of resistivity, conversion efficiency and light-induced degradation, the optimal gallium-doped ratio of multicrystalline ingots was between 20 and 25%.

中文翻译：

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硼镓共掺杂多晶锭的制备及性能研究

摘要 本文研究了不同硼镓掺杂比的多晶硅锭的制备。对电阻率分布、少数载流子寿命、光电转换效率和光致退化率进行了分析比较。结果表明，随着镓掺杂比例的增加，硅锭的少数载流子寿命和硅片的转换效率均下降，同时光致退化率明显下降，但与镓不成正比。浓度，通过比较杂质浓度，初步推断铜和铁的杂质也可能影响光致降解。基于电阻率、转换效率和光致退化的性能，