Abstract A flux growth technique for synthesizing Ga1-xNixBO3 single crystals with x up to 0.0012 has been developed. Nickel vs. gallium contents and lattice parameters of synthesized crystals have been determined by X-ray fluorescence and X-ray diffraction (XRD) analysis, respectively. It has been found that with increasing nickel contents another crystalline phase appears. XRD studies have shown that this phase corresponds to NiGa2O4 spinel.

中文翻译：

---

镍掺杂下硼酸镓GaBO3单晶的结构转变

摘要 已开发出一种用于合成 x 高达 0.0012 的 Ga1-xNixBO3 单晶的助熔剂生长技术。镍与镓含量和合成晶体的晶格参数分别通过 X 射线荧光和 X 射线衍射 (XRD) 分析确定。已经发现，随着镍含量的增加，出现另一种结晶相。XRD 研究表明，该相对应于 NiGa2O4 尖晶石。