Abstract The well-known quaternary Cu2ZnSnS4 (CZTS) chalcogenide thin films are playing an important role in modern technology. The CZTS nanocrystal were successfully prepared by solution method using water, ethylene glycol and ethylenediamine as different solvent. The pure phase material was used for thin film coating by thermal evaporation method. The prepared CZTS thin films were characterized by XRD, Raman spectroscopy, FESEM, XPS and FT-IR spectroscopy. The XRD and Raman spectroscopy analysis revealed the formation of polycrystalline CZTS thin film with tetragonal crystal structure after annealing at 450 °C. The oxidation state of the annealed film was studied by XPS. A direct band gap about 1.36 eV was estimated for the film from FT-IR studies, which is nearly close to the optimum value of band gap energy of CZTS materials for best solar cell efficiency. The CZTS annealed thin films are more suitable for using as a p-type absorber layer in a low-cost solar cell.

中文翻译：

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溶剂对溶液加工的 Cu2ZnSnS4 纳米晶体和退火引起的 CZTS 薄膜光学、结构特性变化的影响

摘要 众所周知的四元 Cu2ZnSnS4 (CZTS) 硫属化物薄膜在现代技术中发挥着重要作用。以水、乙二醇和乙二胺为不同溶剂，采用溶液法成功制备了CZTS纳米晶。采用热蒸发法将纯相材料用于薄膜涂层。通过XRD、拉曼光谱、FESEM、XPS和FT-IR光谱对制备的CZTS薄膜进行表征。XRD 和拉曼光谱分析表明，在 450 °C 退火后形成了具有四方晶体结构的多晶 CZTS 薄膜。通过XPS研究退火膜的氧化态。根据 FT-IR 研究估计薄膜的直接带隙约为 1.36 eV，这几乎接近于获得最佳太阳能电池效率的 CZTS 材料的最佳带隙能量值。CZTS 退火薄膜更适合用作低成本太阳能电池中的 p 型吸收层。