Workfunction modulated dual material gate FinFET (WMDMG-FinFET) is proposed to improve the DC performance of the device. A dual metal gate FinFET with linear modulation in workfunction along the source side of gate electrode keeping drain side gate electrode workfunction to be constant is introduced. Its subthreshold performance (i.e., switching ratio and subthreshold swing) is enhanced by introducing spacers in the side-walls of gate, with underlap concept. SILVACO TCAD tool is used to carry out the simulation work. The simulation results are compared for different spacers and it is observed that TiO₂ spacer with high-k dielectric gives the best switching ratio and lowest subthreshold swing. The WMDMG-FinFET with spacers in the underlapped region shows better subthreshold characteristics as compared to conventional DMG-FinFET.

提出了功函数调制的双材料栅极FinFET（WMDMG-FinFET），以改善器件的直流性能。介绍了一种双金属栅极FinFET，它沿栅极的源极具有功函数线性调制，从而使漏极侧的栅极功函数保持恒定。通过在门的侧壁中引入间隔物（具有重叠概念），可以增强其亚阈值性能（即开关比和亚阈值摆幅）。SILVACO TCAD工具用于执行仿真工作。比较了不同垫片的模拟结果，发现TiO ₂具有高k介电常数的隔离层可提供最佳的开关比和最低的亚阈值摆幅。与常规DMG-FinFET相比，在重叠区域中具有间隔物的WMDMG-FinFET具有更好的亚阈值特性。