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Controllable growth and flexible optoelectronic devices of regularly-assembled Bi 2 S 3 semiconductor nanowire bifurcated junctions and crosslinked networks
Nano Research ( IF 9.9 ) Pub Date : 2020-06-17 , DOI: 10.1007/s12274-020-2841-6
Yi Hu , Lingyun Mao , Xin Yuan , Jingyu Lu , Renpeng Chen , Tao Chen , Wenjun Zhang , Xiaolan Xue , Wen Yan , Mohammadreza Shokouhimehr , Xiao Li Zhang , Zhong Jin

Regularly assembled structures of nanowires, such as aligned arrays, junctions and interconnected networks, have great potential for the applications in logical circuits, address decoders, photoelectronic devices and transparent electrodes. However, for now it is still lack of effective approaches for constructing nanowire bifurcated junctions and crosslinked networks with ordered orientations and high quality. Herein, we report the controlled growth of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks with well-aligned directions and high crystalline degree by utilizing the proportional lattice match between nanowires and substrates. Taking advantages of the “tip-to-stem splice” assembly of individual nanowires, the precise orientation alignments of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks were successfully realized. The controlled growth mechanism and structural evolution process have been elucidated by detailed atomic structure characterizations and modeling. The highly crystal quality and direct energy bandgap of as-assembled photodetectors based on individual bismuth sulfide nanowires enabled high photoresponsivity and fast switch time under light illumination. The three-terminal devices based on nanowire bifurcated junctions present rapid carrier transport across the junction. The flexible photodetectors based on nanowire crosslinked networks show very minimal decay of photocurrent after long-term bending test. This work may provide new insights for the guided construction and regular assembly of low-dimensional ordered functional nanostructures towards advanced nanotechnologies.



中文翻译:

规则组装的Bi 2 S 3半导体纳米线分叉结和交联网络的可控增长和柔性光电器件

纳米线的规则组装结构,例如对准的阵列,结和互连的网络,对于逻辑电路,地址解码器,光电器件和透明电极的应用具有巨大的潜力。然而,目前仍缺乏有效的方法来构建具有有序取向和高质量的纳米线分叉结和交联网络。在这里,我们报告通过利用纳米线和基板之间的成比例的晶格匹配,Bi 2 S 3半导体纳米线的分叉结和交联网络的受控生长,具有良好的排列方向和高结晶度。利用单个纳米线的“尖端到茎部的接头”组装的优势,Bi的精确取向对准2小号3半导体纳米线分叉结和交联网络已成功实现。通过详细的原子结构表征和建模,阐明了受控生长机制和结构演化过程。基于单个硫化铋纳米线的已组装光电探测器的高晶体质量和直接能带隙实现了高光响应性和在光照下的快速切换时间。基于纳米线分叉结的三端子器件可实现跨结的快速载流子传输。经过长期弯曲测试,基于纳米线交联网络的柔性光电探测器显示出非常小的光电流衰减。

更新日期:2020-06-17
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