III-nitrides and beta-phase gallium oxide (β-Ga 2 O 3 ) are currently two intensively investigated wide bandgap semiconductor materials for power electronics. Due to the relatively low lattice mismatch between the two material systems and the availability of bulk AlN, GaN and β-Ga 2 O 3 substrates, epitaxial growth of III-nitrides on β-Ga 2 O 3 or vice versa has been realized. However, the design of power devices by integrating the two material systems is still lacking. Here we numerically investigate an AlN/β-Ga 2 O 3 heterostructure by taking advantage of polarization-induced doping to realize high-performance enhancement-mode transistors. Induced by polarization effects at the AlN/β-Ga 2 O 3 interface, a 2-dimensional electron gas concentration can reach up to 8.1 × 10 19 cm −3 in the channel. On top of the channel, a p-GaN gate was introduced and eventually a nor...

中文翻译：

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使用极化诱导掺杂的常关AlN /β-Ga2 O 3场效应晶体管

III族氮化物和β相氧化镓（β-Ga2 O 3）目前是两种广泛研究的用于电力电子的宽带隙半导体材料。由于两种材料体系之间较低的晶格失配以及块状AlN，GaN和β-Ga2 O 3衬底的可用性，已经实现了III-氮化物在β-Ga2 O 3上的外延生长，反之亦然。但是，仍然缺乏通过将两种材料系统集成在一起来设计功率器件的方法。在这里，我们通过利用极化诱导的掺杂来实现高性能增强模式晶体管，对AlN /β-Ga2 O 3异质结构进行了数值研究。由于在AlN /β-Ga2 O 3界面处的极化效应所致，二维电子气的浓度在通道中可以达到8.1×10 19 cm -3。在频道顶部，