In this work, the design of multi-channels tri-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) is optimized for high-power and high-frequency applications. With a full self-consistent 3D modeling on carrier transport and heating issues, the optimized design of multi-channel AlGaN/GaN layer thickness, modulation doping of channel layer, and fin width are investigated and the influences of self-heating effects had been studied. After a proper design, the performance of experimental work can be further improved. The optimized enhance mode FinFET with four channels shows a 3.2 times higher maximum transconductance compared to the single channel tri-gate device. And the performance of unit current gain frequency also has an improvement in multi-channel FinFETs.

中文翻译：

---

基于 GaN 的多通道 FinFET 的分析和优化

在这项工作中，多通道三栅极 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的设计针对高功率和高频应用进行了优化。通过对载流子传输和加热问题的完全自洽 3D 建模，研究了多通道 AlGaN/GaN 层厚度、通道层调制掺杂和鳍片宽度的优化设计，并研究了自加热效应的影响. 经过适当的设计，可以进一步提高实验工作的性能。与单通道三栅极器件相比，具有四通道的优化增强模式 FinFET 的最大跨导高出 3.2 倍。并且单位电流增益频率的性能在多通道FinFET中也有提升。