An approach to merge superconducting Josephson junction (JJ) devices with nanoscale Graphene devices in order to achieve high gain-bandwidth-product on the order of THz is proposed. While JJ-based devices have existed since nearly 1962, interfacing or interacting with them with standard electrical systems has been a challenge for several reasons, including operating temperature, switching speed, and low-signal sensitivity. In this article, we investigated the possibility of utilizing JJ's so-called ac effect in order to generate high frequency signals that can be accommodated by high speed nanoscale devices. Graphene nanoribbon field effect transistors (GNRFET) have been emphasized for their very high frequency operation that is appropriate to accommodate the very high switching speed of the JJ devices. The article is based on the ac JJ effect with generating a sinusoidal current whose frequency directly scales with voltage. For a single-stage GNRFET CS amplifier, a gain of 35.7 dB with a bandwidth of 217 GHz was achieved, while 10.8 dB with a unitary gain of 2.5 THz was also accomplished. This article details the design and interface of the JJ with GNRFET devices, targeting high frequency signal generation on the order of hundreds of GHz to THz, with the purpose of providing a foundation on top of which further developments can be made, especially in the areas of communications, medical devices, instrumentation and measurement devices, high-speed imaging, subinfrared antenna arrays, and computer architecture and hardware, by providing a system, which can respond to speeds on the order of fifty to one hundred times faster than current commercial computer equipment or signal generation/processing.

中文翻译：

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通过新兴混合 GNRFET/约瑟夫森结技术的高速太赫兹器件

提出了一种将超导约瑟夫森结 (JJ) 器件与纳米级石墨烯器件合并的方法，以实现 THz 量级的高增益带宽积。虽然基于 JJ 的设备自 1962 年以来就已经存在，但由于多种原因，包括工作温度、开关速度和低信号灵敏度在内，将它们与标准电气系统连接或交互一直是一个挑战。在本文中，我们研究了利用 JJ 所谓的交流效应来生成高速纳米级器件可以容纳的高频信号的可能性。石墨烯纳米带场效应晶体管 (GNRFET) 因其非常高的频率运行而受到重视，适合适应 JJ 器件的非常高的开关速度。本文基于交流 JJ 效应，产生正弦电流，其频率与电压直接成比例。对于单级 GNRFET CS 放大器，在 217 GHz 带宽下实现了 35.7 dB 的增益，同时在 2.5 THz 的单一增益下也实现了 10.8 dB。本文详细介绍了 JJ 与 GNRFET 器件的设计和接口，目标是产生数百 GHz 到 THz 量级的高频信号，目的是提供一个基础，在此基础上可以进一步发展，特别是在这些领域通信、医疗设备、仪器和测量设备、高速成像、亚红外天线阵列以及计算机体系结构和硬件，通过提供一个系统，