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Preparation and High Photocurrent Generation Enhancement of Self-Assembled Layered Double Hydroxide-Based Composite Dye Films.
Langmuir ( IF 3.9 ) Pub Date : 2020-06-16 , DOI: 10.1021/acs.langmuir.0c01085
Xiujuan Liu 1 , Ying He 2, 3 , Guangcong Zhang 3 , Ran Wang 3 , Jingxin Zhou 3 , Lexin Zhang 3 , Jianmin Gu 3 , Tifeng Jiao 2, 3
Affiliation  

Understanding photocurrent conversion of layered double hydroxide (LDH) materials will be a key step in the future application of these materials to light-capturing molecular devices. In the present study, ultrathin nickel–iron layered double hydroxide/dye (NF-LDH/dye) Langmuir–Blodgett (LB) semiconductor films were prepared using an LB device and deposited on an indium tin oxide (ITO) substrate as a photoanode. The photoelectric conversion efficiency of the prepared LB semiconductor film materials was tested. A comparative experiment was performed to effectively explore the photoelectric conversion performances of the LB semiconductor film materials. Specifically, the NF-LDH cast film electrode, the dye cast film electrode, and an ultrathin composite LB film electrode were used as typical samples to explore photoelectric conversion performances. The electrochemical workstation was used to study the photocurrent density, linear scanning voltammetry curve, and electrochemical impedance spectroscopy of LB film electrodes with different layers. The results show that the film electrode cast by LDH alone or dye alone produces weak photocurrent. The photoelectric conversion efficiency of the LB film electrode is enhanced due to the different dyes’ molecular structures and/or aggregations on the surface of LDH with various morphological patterns. The combined NF-LDH/dye composite LB film photoelectrode can generate a photocurrent that is 2–5 times stronger than the raw material, and the stable use efficiency is more than 92%. Present obtained composite LB films demonstrated a uniform morphology and good photoelectric conversion ability. This work provides a useful reference for the field of LDH semiconductor optoelectronic devices and solar cells.

中文翻译:

自组装层状双氢氧化物基复合染料薄膜的制备及高光电流产生增强。

了解层状双氢氧化物(LDH)材料的光电流转换将是这些材料在未来的光捕获分子器件中应用的关键一步。在本研究中,使用LB器件制备了超薄镍铁层双氢氧化物/染料(NF-LDH / dye)Langmuir-Blodgett(LB)半导体膜,并将其沉积在铟锡氧化物(ITO)衬底上作为光阳极。测试了所制备的LB半导体膜材料的光电转换效率。进行了比较实验以有效地探索LB半导体膜材料的光电转换性能。具体地,将NF-LDH流延膜电极,染料流延膜电极和超薄复合LB膜电极用作典型样品以探索光电转换性能。电化学工作站用于研究不同层LB膜电极的光电流密度,线性扫描伏安曲线和电化学阻抗谱。结果表明,仅由LDH或仅由染料流延的膜电极产生弱的光电流。由于不同的染料分子结构和/或LDH表面上具有各种形态学图案的聚集,LB膜电极的光电转换效率得以提高。组合的NF-LDH /染料复合LB薄膜光电极可产生比原料强2-5倍的光电流,稳定的使用效率超过92%。目前获得的复合LB膜表现出均匀的形态和良好的光电转换能力。
更新日期:2020-07-07
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