Abstract Plasma-enhanced chemical vapor deposition (PECVD) technique is well suited for fabricating optical filters with continuously variable refractive index profiles; however, it is not clear how the optical and microstructural properties of thin films differ when deposited on different substrates. Herein, silicon oxynitride films were deposited on silicon , fused silica, and glass substrates with two stoichiometric ratios by PECVD, using silane , ammonia , and nitrous oxide gasses, to investigate the effects of the substrate used on the optical properties and microstructures of the films. All the deposited films were amorphous. Further, the types and amounts of Si-centered tetrahedral Ox-Si-Ny bonds formed were based upon the substrates and stoichiometric ratios used; Ox-Si-Ny bonds with higher elemental nitrogen content were formed on Si substrates, which lead to obtaining higher refractive indices. The relationship between the surface roughness of the film and type of substrate was discussed. The extinction coefficients of all the films were very small, and the films exhibited low absorption. The refractive indices of the films formed on the different substrates had a maximum difference of 0.03 . The deposition rates of the films increased in the order of fused silica, glass, and silicon .

中文翻译：

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不同衬底材料对等离子体增强化学气相沉积非晶氧氮化硅薄膜微观结构和光学性能的影响

摘要 等离子体增强化学气相沉积 (PECVD) 技术非常适用于制造具有连续可变折射率分布的光学滤波器；然而，尚不清楚沉积在不同基材上的薄膜的光学和微观结构特性有何不同。在此，使用硅烷、氨气和一氧化二氮气体，通过 PECVD 在硅、熔融石英和玻璃基板上以两种化学计量比沉积氮氧化硅薄膜，以研究所用基板对薄膜光学性能和微观结构的影响. 所有沉积的薄膜都是非晶态的。此外，形成的以 Si 为中心的四面体 Ox-Si-Ny 键的类型和数量取决于所使用的基材和化学计量比；在 Si 衬底上形成具有更高元素氮含量的 Ox-Si-Ny 键，从而获得更高的折射率。讨论了薄膜表面粗糙度与基材类型之间的关系。所有薄膜的消光系数都非常小，薄膜表现出低吸收。在不同基板上形成的薄膜的折射率最大差异为0.03。薄膜的沉积速率按熔融石英、玻璃和硅的顺序增加。在不同基板上形成的薄膜的折射率最大差异为0.03。薄膜的沉积速率按熔融石英、玻璃和硅的顺序增加。在不同基板上形成的薄膜的折射率最大差异为0.03。薄膜的沉积速率按熔融石英、玻璃和硅的顺序增加。