For Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cells, eliminating multi-layer crystallization is a key issue of achieving high quality CZTSSe absorber layers and high cell performance. In this work, the formation mechanism of the multi-layer crystallization is revealed, that is, the reaction between CZTS and Mo may give the secondary phase, which subsequently acts as crystal nucleus to facilitate the CZTSSe crystal growth at back interface (Mo/CZTSSe), leading to multi-layer crystallization. By introducing MoO₃ isolating layer, this undesired reaction can be well prevented, and high quality single-layer crystals are obtained. This absorber film with fewer defects and secondary phases exhibits better semiconductor properties. Based on this regulated CZTSSe absorber layer, 11.68% (active area: 0.16092 cm²) and 10.69% (mask area: 0.17586 cm²) certified power-conversion-efficiency have been achieved with significant increase in the open-circuit voltage and fill factor.

对于Cu ₂ ZnSn（S，Se）₄（CZTSSe）太阳能电池，消除多层结晶是实现高质量CZTSSe吸收层和高电池性能的关键问题。在这项工作中，揭示了多层结晶的形成机理，即CZTS和Mo之间的反应可能产生第二相，该第二相随后充当晶核，以促进CZTSSe晶体在后界面处生长（Mo / CZTSSe ），导致多层结晶。通过引入MoO ₃隔离层，可以很好地防止这种不希望的反应，并获得高质量的单层晶体。具有较少缺陷和次级相的吸收体膜表现出更好的半导体性能。基于这种经过调节的CZTSSe吸收层，在开路电压和填充系数显着提高的情况下，已实现了11.68％（有效面积：0.16092 cm ²）和10.69％（掩模面积：0.17586 cm ²）的认证电源转换效率。 。