In this work, a single crystal of 4H–SiC was subjected to phosphorus irradiation at 100 keV with four different fluences at room temperature (RT) and post-irradiation annealing treatments at temperature range from 200 to 600 °C. The measured effective refractive index reflected that the disorder increased with the increasing fluences and partially recovered after our annealing treatments. Rutherford backscattering /channeling (RBS/C) experiments displayed that above the fluence of 5.0 × 10 14 ions/cm 2 , severe damage caused in the surface of 4H-SiC crystal. The amorphous layer about 136 nm induced when the fluence is up to 1.0 × 10 15 ions/cm 2 according to the transmission electron microscopy (TEM) results. The amorphous phenomenon was explained by lattice swelling. We obtained the damage threshold value for the formation of amorphous in 4H–SiC crystal is about 0.3 dpa. Phosphor is one of the important semiconductor dopant elements. This work provides reference data on selective doping of SiC-based electronic devices.

中文翻译：

---

P离子辐照后4H-SiC的损伤研究

在这项工作中，4H-SiC 单晶在室温 (RT) 下以 100 keV 的四种不同能量密度进行磷辐照，并在 200 至 600 °C 的温度范围内进行辐照后退火处理。测量的有效折射率反映无序随着通量的增加而增加，并在我们的退火处理后部分恢复。卢瑟福背向散射/沟道（RBS/C）实验表明，超过 5.0 × 10 14 离子/cm 2 的通量，4H-SiC 晶体的表面会产生严重的损伤。根据透射电子显微镜 (TEM) 结果，当注量达到 1.0 × 10 15 离子/cm 2 时，诱导出约 136 nm 的非晶层。非晶现象可以用晶格膨胀来解释。我们获得了在 4H-SiC 晶体中形成非晶态的损伤阈值约为 0.3 dpa。磷是重要的半导体掺杂元素之一。这项工作为基于 SiC 的电子器件的选择性掺杂提供了参考数据。