Low frequency reverse current noise is studied for the first time in InAsSbP/InAs double heterostructure (DH) photodiodes in the frequency range 1 Hz–10 4 Hz at 300 K and 100 K. At room temperature, the noise in the DH photodiodes is 1/ f and might be significantly lower (by ∼17 dB) than in single heterostructure InAsSbP/InAs photodiodes. In the practically most important regime of low reverse currents, I rb , the current dependence of spectral noise density is proportional to ##IMG## [http://ej.iop.org/images/0268-1242/35/7/075010/sstab8756ieqn1.gif] {$I_{rb}^2$} , both at 300 K and 100 K. The reverse current noise might provide the limit for the detectivity of DH photodiodes at I rb > 3 × 10 −6 A at 300 K and I rb > 8 × 10 −9 A at 100 K.

中文翻译：

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反向偏置双异质结构P- InAsSbP / n- InAs红外光电二极管中的低频噪声

在300 K和100 K的频率范围1 Hz–10 4 Hz的InAsSbP / InAs双异质结构（DH）光电二极管中首次研究了低频反向电流噪声。在室温下，DH光电二极管的噪声为1 / f，可能比单异质结构InAsSbP / InAs光电二极管低得多（约17 dB）。在实际上最重要的低反向电流状态下，I rb，频谱噪声密度的电流依赖性与## IMG ##成正比[http://ej.iop.org/images/0268-1242/35/7/ 075010 / sstab8756ieqn1.gif] {$ I_ {rb} ^ 2 $}，都在300 K和100 K时产生。反向电流噪声可能会限制DH光电二极管在I rb> 3×10 -6 A时的检出限300 K和100 K下I rb> 8×10 -9 A