Magnetoresistance effects are used in a variety of devices including hard disk drives and magnetic random access memories. In particular, giant magnetoresistance and tunnelling magnetoresistance can be used to create spin valves and tunnel junctions in which the resistance depends on the relative magnetization orientations of two ferromagnetic conducting layers. Here, we report a magnetoresistance effect that occurs in a platinum layer deposited on a magnon junction consisting of two insulating magnetic yttrium iron garnet (YIG) layers separated by an antiferromagnetic nickel oxide spacer layer. The resistance of the platinum layer is found to depend on the magnetization of the YIG layer in direct contact with it (an effect known as spin Hall magnetoresistance), but also the magnetization of the adjacent YIG layer in the junction. The resistance of the platinum layer is higher when the two YIG layers are aligned antiparallel than when parallel. We assign this behaviour to a magnonic nonlocal spin Hall magnetoresistance in which spin-carrying magnon propagation across the junction affects spin accumulation at the metal interface and hence modulates the spin Hall magnetoresistance. The effect could be used to develop spintronic and magnonic devices that have spin transport properties controlled by an all-insulating magnon junction and are thus free from Joule heating.

磁阻效应可用于各种设备，包括硬盘驱动器和磁性随机存取存储器。特别地，巨大的磁阻和隧穿磁阻可用于产生自旋阀和隧道结，其中自旋阀和隧道结的电阻取决于两个铁磁导电层的相对磁化方向。在这里，我们报告磁阻效应发生在沉积在磁结上的铂层中，该磁结由反铁磁氧化镍间隔层隔开的两个绝缘磁钇铁石榴石（YIG）层组成。发现铂层的电阻取决于与之直接接触的YIG层的磁化强度（一种称为自旋霍尔磁阻的效应），还取决于结中相邻YIG层的磁化强度。当两个YIG层反平行排列时，铂层的电阻高于平行时。我们将此行为分配给强磁非局部自旋霍尔磁阻，其中跨结的自旋载磁子传播会影响金属界面处的自旋积累，从而调节自旋霍尔磁阻。这种效应可用于开发具有自旋输运特性的自旋电子和大磁电器件，该自旋输运特性由全绝缘的磁振子结控制，因此不受焦耳热的影响。我们将此行为分配给强磁非局部自旋霍尔磁阻，其中跨结的自旋载磁子传播会影响金属界面处的自旋积累，从而调节自旋霍尔磁阻。该效应可用于开发具有通过全绝缘磁振子结控制的自旋输运性质且因此不受焦耳热影响的自旋电子器件和大型电子器件。我们将此行为分配给强磁非局部自旋霍尔磁阻，其中跨结的自旋载磁子传播会影响金属界面处的自旋积累，从而调节自旋霍尔磁阻。该效应可用于开发具有自旋输运特性的自旋电子和大磁子器件，该自旋输运特性由全绝缘的磁农结控制，因此不受焦耳热的影响。