In the present work, the effects of interface dipoles on channel engineering and on direct tunneling current have been studied for a double gate (DG) NMOSFET with Si and In_0.53Ga_0.47As as channel materials. The gate tunneling current (I_G) has been calculated for both type of devices and simulation results are reported using Silvaco ATLAS 3D TCAD. A gate length of 10 nm has been used for the simulations. All simulations have been carried out by considering the Direct Quantum Tunneling current model along with the self‐consistent solution of Schrödinger's equation with Poisson's equation. The wavefunction penetration into SiO₂ has also been considered. Fermi Dirac statistics has been used in case of heavy acceptor doping of channel region in the devices studied. The effects of high‐k material, metal gate work function, and P⁺ channel doping variation on I_G have also been studied. The calculations of I_G have been carried out using SiO₂ (0.8 nm thickness), and with its equivalent oxide thickness (EOT) using SiO₂ + HfO₂ (0.7nm + 0.641nm). In case of SiO₂ + HfO₂, changes in dipole moment at interface take place and lead to the change in work function of metal gates. This has been considered under interface dipole effects. It has been observed that I_G of the NMOSFET decreases when high‐k material is used as gate dielectric. Also, the gate metal with high work function and heavy acceptor type doping of channel results in decrease in I_G. There is a further reduction in I_G by including the interface dipoles effect.

中文翻译：

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界面偶极子对沟道工程和双栅极MOSFET中直接隧穿电流的影响

在当前的工作中，已经研究了以Si和In _0.53 Ga _0.47作为沟道材料的双栅（DG）NMOSFET对界面偶极子对沟道工程和直接隧穿电流的影响。已经针对两种类型的器件计算了栅极隧穿电流（I _G），并使用Silvaco ATLAS 3D TCAD报告了仿真结果。模拟使用了10 nm的栅极长度。所有模拟都是通过考虑直接量子隧穿电流模型以及Schrödinger方程与Poisson方程的自洽解进行的。波函数渗透到SiO _2中也已经考虑过了。费米·狄拉克（Fermi Dirac）统计数据已用于所研究器件中严重掺杂受体的沟道区域。还研究了高k材料，金属栅极功函数以及P ⁺沟道掺杂变化对I _G的影响。I _G的计算使用SiO ₂ （0.8 nm厚度）进行，并且其等效氧化物厚度（EOT）使用SiO ₂  +  HfO ₂ （0.7 nm  + 0.641 nm）进行。在的情况下的SiO ₂  + 的HfO ₂，界面处的偶极矩发生变化，并导致金属栅极的功函数发生变化。在界面偶极效应下已经考虑了这一点。已经观察到，当将高k材料用作栅极电介质时，NMOSFET的I _G减小。此外，具有高功函数和沟道的受主型掺杂严重的栅极金属导致I _G降低。存在进一步减少余_ģ由包括界面偶极子效应。