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Quantitative phase‐mode electrostatic force microscopy on silicon oxide nanostructures
Journal of Microscopy ( IF 1.5 ) Pub Date : 2020-06-26 , DOI: 10.1111/jmi.12938
C Albonetti 1 , S Chiodini 1, 2 , P Annibale 1, 3 , P Stoliar 1, 4 , R V Martinez 5, 6 , R Garcia 5 , F Biscarini 1, 7, 8
Affiliation  

Phase‐mode electrostatic force microscopy (EFM‐Phase) is a viable technique to image surface electrostatic potential of silicon oxide stripes fabricated by oxidation scanning probe lithography, exhibiting an inhomogeneous distribution of localized charges trapped within the stripes during the electrochemical reaction. We show here that these nanopatterns are useful benchmark samples for assessing the spatial/voltage resolution of EFM‐phase. To quantitatively extract the relevant observables, we developed and applied an analytical model of the electrostatic interactions in which the tip and the surface are modelled in a prolate spheroidal coordinates system, fitting accurately experimental data. A lateral resolution of ∼60 nm, which is comparable to the lateral resolution of EFM experiments reported in the literature, and a charge resolution of ∼20 electrons are achieved. This electrostatic analysis evidences the presence of a bimodal population of trapped charges in the nanopatterned stripes.

中文翻译:

氧化硅纳米结构上的定量相位模式静电力显微镜

相位模式静电力显微镜(EFM-Phase)是一种可行的技术,可以对氧化扫描探针光刻法制造的氧化硅条纹的表面静电电位进行成像,在电化学反应过程中,条纹内捕获的局部电荷的分布不均匀。我们在这里展示了这些纳米图案是评估 EFM 相位空间/电压分辨率的有用基准样本。为了定量提取相关的观测值,我们开发并应用了静电相互作用的分析模型,其中尖端和表面在长球体坐标系中建模,准确拟合实验数据。〜60 nm的横向分辨率,与文献中报道的EFM实验的横向分辨率相当,并且实现了~20个电子的电荷分辨率。这种静电分析证明纳米图案条纹中存在双峰捕获电荷。
更新日期:2020-06-26
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