Abstract He-charged W films and He-charged W-Y2O3 films have been fabricated by RF magnetron sputtering in a mixed atmosphere of He and Ar. The growth mechanism of He bubbles/blisters in He-charged W/W-Y2O3 films was investigated by the isochronal annealing at different temperatures (773 K, 973 K, and 1273 K, respectively). Compared with the case of He-charged W film without Y2O3 addition, Y2O3 addition restrain obviously He blistering in He-charged W-Y2O3 film. It seems that the addition of Y2O3 can inhibit in some extent the growth of He bubbles in W-Y2O3 film according to transmission electron microscopy observations. Thermal desorption spectroscopy analysis indicates that there are five He desorption peaks within the range of 1273 K in both the as-deposited He-charged W/W-Y2O3 films, and it exists as well as an inhibiting effect of Y2O3 addition on the entrapping or de-trapping of He atoms in W-Y2O3 film.

中文翻译：

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添加 Y2O3 对 W-Y2O3 膜中 He 解吸行为和 He 气泡演化的影响

摘要 在氦气和氩气的混合气氛中通过射频磁控溅射制备了带氦气的钨膜和带氦气的 W-Y2O3 膜。通过等时退火在不同温度（分别为 773 K、973 K 和 1273 K）下研究了带 He 的 W/W-Y2O3 薄膜中 He 气泡/水泡的生长机制。与未添加Y2O3的充He电W薄膜相比，添加Y2O3明显抑制了充He电W-Y2O3薄膜中的He起泡。根据透射电镜观察，Y2O3 的加入似乎可以在一定程度上抑制 W-Y2O3 薄膜中 He 气泡的生长。热解吸光谱分析表明，在沉积的 He 带电 W/W-Y2O3 薄膜中，在 1273 K 范围内有五个 He 解吸峰，