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Low voltage organic transistors with water-processed gum arabic dielectric
Synthetic Metals ( IF 4.0 ) Pub Date : 2020-09-01 , DOI: 10.1016/j.synthmet.2020.116447
Mané Seck , Navid Mohammadian , Abdou K. Diallo , Sheida Faraji , Meriem Saadi , Mohsen Erouel , El Hadji Babacar Ly , Kamel Khirouni , Leszek A. Majewski

Abstract In this communication, low voltage organic thin film transistors (OTFTs) using water-processed gum arabic (GA) as the gate dielectric are reported. The fabricated OTFTs operate at 3 V with a field-effect mobility in the saturation regime μsat = 0.6 cm2V-1s-1, threshold voltage Vth = -0.35 V, subthreshold swing SS = 350 mV/dec, and on/off current ratio ION/OFF > 102. The characterization of metal-insulator-metal (MIM) capacitors shows that the studied GA displays high dielectric constant at 1 kHz (k ∼ 30) and that the leakage current density through the prepared (1250 ± 14) nm thick GA films is around 10−7 A/cm² at ±3 V. As a result, gum arabic emerges as a promising gate dielectric for low voltage OTFTs especially when the requirements of eco-friendly manufacturing are considered.

中文翻译:

具有水处理阿拉伯树胶电介质的低压有机晶体管

摘要 在这篇文章中,报道了使用水处理阿拉伯树胶 (GA) 作为栅极电介质的低压有机薄膜晶体管 (OTFT)。制造的 OTFT 在 3 V 下工作,在饱和状态下具有场效应迁移率 μsat = 0.6 cm2V-1s-1,阈值电压 Vth = -0.35 V,亚阈值摆幅 SS = 350 mV/dec,开/关电流比 ION /OFF > 102. 金属-绝缘体-金属 (MIM) 电容器的特性表明,所研究的 GA 在 1 kHz (k ∼ 30) 下显示出高介电常数,并且通过制备的 (1250 ± 14) nm 厚的漏电流密度GA 薄膜在 ±3 V 时约为 10−7 A/cm²。因此,阿拉伯树胶成为低电压 OTFT 的有前途的栅极电介质,尤其是在考虑到环保制造的要求时。
更新日期:2020-09-01
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