MoS₂ is among the two-dimensional (2D) transition metal dichalcogenides (TMD) and has been studied as a potential semiconductor material for various devices. To increase the performance of MoS₂-based devices, contact engineering of metal to TMD materials has recently become an area of focus. The doping method is one way to reduce resistance, and molecular doping is a suitable doping method for MoS₂ with a very thin layer structure. We demonstrate controllable molecular doping on MoS₂ transistors using 1,2 dichloroethane (DCE) solution. Chloride molecules contained within the DCE solution act as an n-type dopant and increase the carrier density. The doping effects were confirmed by Raman spectroscopy, X-ray photoelectron spectroscopy, and current-voltage characteristics. We observed that the threshold voltages shifted toward the negative direction, implying electron doping of MoS₂ after Cl-doping. Additionally, the field-effect mobility and the carrier densities were enhanced from 11.9 cm²·V⁻¹·s⁻¹ to 72.8 cm²·V⁻¹·s⁻¹ and from 3.62 × 10¹¹ cm^-2 to 1.37 × 10¹² cm^-2, respectively, by increasing the molar concentration of 1,2-dichloroethane solution to 12.6 M.

MoS ₂属于二维（2D）过渡金属二卤化金属（TMD），已被研究为各种器件的潜在半导体材料。为了提高基于MoS ₂的器件的性能，金属与TMD材料的接触工程最近已成为关注的领域。掺杂方法是降低电阻的一种方法，并且分子掺杂是具有非常薄的层结构的MoS ₂的合适的掺杂方法。我们展示了MoS ₂上可控的分子掺杂晶体管使用1,2二氯乙烷（DCE）溶液。DCE溶液中包含的氯化物分子充当n型掺杂剂并增加载流子密度。通过拉曼光谱，X射线光电子能谱和电流-电压特性证实了掺杂效果。我们观察到阈值电压向负方向移动，这意味着在Cl掺杂后MoS _2的电子掺杂。此外，场效应迁移率和载流子密度从11.9 cm ² ·V ^-1 ·s ^-1增加到72.8 cm ² ·V ^-1 ·s ^-1和从3.62×10 ¹¹ cm ^-2增加到1.37×10 ¹²厘米通过将1,2-二氯乙烷溶液的摩尔浓度增加到12.6 M分别达到^-2。