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Characteristics of Cl-doped MoS2 field-effect transistors
Sensors and Actuators A: Physical ( IF 4.1 ) Pub Date : 2020-06-15 , DOI: 10.1016/j.sna.2020.112165
Taeyoung Kim , Yoonsok Kim , Eun Kyu Kim

MoS2 is among the two-dimensional (2D) transition metal dichalcogenides (TMD) and has been studied as a potential semiconductor material for various devices. To increase the performance of MoS2-based devices, contact engineering of metal to TMD materials has recently become an area of focus. The doping method is one way to reduce resistance, and molecular doping is a suitable doping method for MoS2 with a very thin layer structure. We demonstrate controllable molecular doping on MoS2 transistors using 1,2 dichloroethane (DCE) solution. Chloride molecules contained within the DCE solution act as an n-type dopant and increase the carrier density. The doping effects were confirmed by Raman spectroscopy, X-ray photoelectron spectroscopy, and current-voltage characteristics. We observed that the threshold voltages shifted toward the negative direction, implying electron doping of MoS2 after Cl-doping. Additionally, the field-effect mobility and the carrier densities were enhanced from 11.9 cm2·V−1·s−1 to 72.8 cm2·V−1·s−1 and from 3.62 × 1011 cm-2 to 1.37 × 1012 cm-2, respectively, by increasing the molar concentration of 1,2-dichloroethane solution to 12.6 M.



中文翻译:

掺Cl的MoS 2场效应晶体管的特性

MoS 2属于二维(2D)过渡金属二卤化金属(TMD),已被研究为各种器件的潜在半导体材料。为了提高基于MoS 2的器件的性能,金属与TMD材料的接触工程最近已成为关注的领域。掺杂方法是降低电阻的一种方法,并且分子掺杂是具有非常薄的层结构的MoS 2的合适的掺杂方法。我们展示了MoS 2上可控的分子掺杂晶体管使用1,2二氯乙烷(DCE)溶液。DCE溶液中包含的氯化物分子充当n型掺杂剂并增加载流子密度。通过拉曼光谱,X射线光电子能谱和电流-电压特性证实了掺杂效果。我们观察到阈值电压向负方向移动,这意味着在Cl掺杂后MoS 2的电子掺杂。此外,场效应迁移率和载流子密度从11.9 cm 2 ·V -1 ·s -1增加到72.8 cm 2 ·V -1 ·s -1和从3.62×10 11 cm -2增加到1.37×10 12厘米通过将1,2-二氯乙烷溶液的摩尔浓度增加到12.6 M分别达到-2

更新日期:2020-06-15
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