Abstract Resistive switches have great potential in aerospace application due to their excellent radiation resistibility. It is important to study the effect of radiation on resistive switches. In this work, we use Ta5+ with an energy of 125 MeV to irradiate the Cu/Ta2O5/Pt devices. Here, fresh devices are irradiated by 108 and 109 ions/cm2 Ta5+, respectively. The devices exhibit high radiation resistibility under an irradiation dosage of 108 ions/cm2. However, the operating voltage was changed from 5 ~ −2 V to 2 ~ −1.5 V under a dosage of 109 ions/cm2. High energy heavy ion irradiation can controllably modify the density of defects or pores in resistive layer, reduce the barrier height of the redox reaction and achieve rapid migration of large amounts of ions. Moreover, the defects or pores generated by irradiation will provide growth paths for preventing conductive filaments from random growth and adjust the size of conductive filaments, making them more likely be in a stable state with the lowest energy and increasing the retention to be more than 8 × 104 s under a current compliance of 100 μA.

中文翻译：

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高能重离子辐照对电阻开关的影响

摘要 电阻式开关由于其优异的抗辐射性，在航空航天领域具有巨大的应用潜力。研究辐射对电阻开关的影响很重要。在这项工作中，我们使用能量为 125 MeV 的 Ta5+ 来照射 Cu/Ta2O5/Pt 器件。在这里，新鲜设备分别受到 108 和 109 个离子/cm2 Ta5+ 的照射。该器件在 108 离子/cm2 的辐照剂量下表现出高抗辐射性。然而，在 109 个离子/cm2 的剂量下，工作电压从 5 ~ -2 V 变为 2 ~ -1.5 V。高能重离子辐照可以可控地改变电阻层缺陷或孔隙的密度，降低氧化还原反应的势垒高度，实现大量离子的快速迁移。而且，