Abstract For the first time, we synthesized ultrasmall colloidal CuIn3Se5 quantum dots (QDs) with an average diameter of 3.5 nm and they were used to obtain nearly continuous ink-coated films by the hot-injection method. Copper chloride, indium chloride, and selenium were used as reagents in oleylamine as the solvent to synthesize CuIn3Se5 QDs without other organometallic precursors. The synthesized CuIn3Se5 QDs had a cubic crystal structure and they exhibited a strong quantum confinement effect according to their optical absorption spectra. The as-deposited and annealed thin films prepared from an ink solution containing these QDs exhibited p-type characteristics, a high band gap, and low surface roughness. The optical constants were determined by interference-free mathematical modeling for the as-deposited and annealed films obtained with the synthesized CuIn3Se5 QDs. Moreover, under 1 sun of simulated radiation, the photocurrent was greatly enhanced (>1000%) for the annealed CuIn3Se5 QD film compared with the as-deposited film. These results suggest that colloidal CuIn3Se5 QD films could potentially be used as an active layer in low-cost highly efficient Cu(In,Ga)Se/CdS thin film solar cells.

中文翻译：

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超小CuIn3Se5量子点的热注射合成及油墨涂层薄膜的制备

摘要 我们首次合成了平均直径为 3.5 nm 的超小胶体 CuIn3Se5 量子点（QDs），并通过热注射法制备了近乎连续的油墨涂层薄膜。使用氯化铜、氯化铟和硒作为试剂，以油胺为溶剂合成 CuIn3Se5 QD，无需其他有机金属前驱体。合成的CuIn3Se5量子点具有立方晶体结构，根据其光吸收光谱表现出很强的量子限制效应。由含有这些 QD 的墨水溶液制备的沉积和退火薄膜表现出 p 型特性、高带隙和低表面粗糙度。对于使用合成的 CuIn3Se5 QD 获得的沉积和退火薄膜，通过无干涉数学模型确定光学常数。此外，在模拟辐射 1 太阳光下，与沉积膜相比，退火的 CuIn3Se5 QD 膜的光电流大大增强（>1000%）。这些结果表明胶体 CuIn3Se5 QD 薄膜有可能用作低成本高效 Cu(In,Ga)Se/CdS 薄膜太阳能电池中的活性层。