Antimony chalcogenide Sb₂(S, Se)₃ is attracting a lot of attention as photovoltaic absorber owing to its rewarding photoelectric properties, low toxicity, and earth abundance. However, its device efficiency is still limited by the absorber material quality and device interface recombination. In this work, a fluorine-doped tin oxide (FTO) substrate with ultra-thin SnO₂ layer and a low-cost stabilized carbon paste are introduced as a front and back contact layer respectively in Sb₂(S, Se)₃ based planar solar cells. Over 5.2 % efficiency is demonstrated in the structure of FTO/SnO₂/CdS/Sb₂(S, Se)₃/Carbon/Ag, where the Sb₂(S, Se)₃ is prepared by hydrothermal technique. The complementary device physics characterizations reveal that the interfacial recombination between TCO and CdS is significantly suppressed by the introduction of ultra-thin SnO₂ layer, which is profited from the leakage protection and bandgap offset engineering by its high resistivity and suitable conduction band minimum. Meanwhile, the successful adoption of the low-cost stabilized carbon as a back contact here shows an enormous potential to replace the conventional organic hole transport materials and noble metal. We hope this work can provide positive guidance to optimize Sb₂(S, Se)₃ based planar solar cells in the future.

硫属硫化物锑Sb ₂（S，Se）₃由于具有良好的光电性能，低毒性和土壤丰度，因此作为光伏吸收剂备受关注。但是，其装置效率仍然受到吸收材料的质量和装置界面复合的限制。在这项工作中，将具有超薄SnO ₂层的掺氟氧化锡（FTO）基板和低成本的稳定碳糊料分别引入到基于Sb ₂（S，Se）₃的平面中的前后接触层太阳能电池。在FTO / SnO ₂ / CdS / Sb ₂（S，Se）₃ / Carbon / Ag的结构中证明了超过5.2％的效率，其中Sb ₂（S，Se）₃通过水热技术制备。互补器件的物理特征表明，超薄SnO ₂层的引入显着抑制了TCO和CdS之间的界面复合，这得益于其高电阻率和合适的最小导带，这得益于泄漏保护和带隙补偿工程。同时，这里成功采用低成本的稳定碳作为背触点，显示出替代常规有机空穴传输材料和贵金属的巨大潜力。我们希望这项工作可以为将来优化基于Sb ₂（S，Se）₃的平面太阳能电池提供积极指导。