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Numerical Investigation of Floating Zone Silicon Using Halbach Array Magnets
Journal of Crystal Growth ( IF 1.7 ) Pub Date : 2020-09-01 , DOI: 10.1016/j.jcrysgro.2020.125773
Xue-Feng Han , Koichi Kakimoto , Samah Alradi , Kader Zaidat

Abstract Novel applications of Halbach array magnets in floating zone processes are proposed. Calculations of the floating zone process with two designs of Halbach array magnets are carried out and compared with the conventional floating zone process. The first part of the calculations including the static and high-frequency electromagnetic fields in the melt and crystal are modelled in COMSOL software. The effect of electromagnetic fields on the melt flow is calculated in three dimensions. From the calculation results, we confirm that Halbach array magnets can provide an adequately strong magnetic field at the surface of silicon to affect the melt flow. From the comparison of calculation results between conventional floating zone and floating zone with Halbach array magnets, the effects of the magnetic field on the melt flow, the temperature distribution, and the crystallization interface are confirmed. Halbach array magnets can locally restrain the melt flow velocity and improve the deflection of the crystallization interface.

中文翻译:

使用 Halbach 阵列磁铁的浮区硅数值研究

摘要 提出了 Halbach 阵列磁铁在浮区工艺中的新应用。进行了两种设计的 Halbach 阵列磁铁的浮区过程的计算,并与传统的浮区过程进行了比较。计算的第一部分包括熔体和晶体中的静态和高频电磁场,在 COMSOL 软件中进行建模。从三个维度计算电磁场对熔体流动的影响。根据计算结果,我们确认 Halbach 阵列磁铁可以在硅表面提供足够强的磁场来影响熔体流动。从常规浮区和带Halbach阵列磁铁的浮区计算结果对比,磁场对熔体流动的影响,温度分布和结晶界面得到确认。Halbach 阵列磁铁可以局部抑制熔体流动速度并改善结晶界面的偏转。
更新日期:2020-09-01
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