Abstract This work proposes to utilize Si particles embedded in Si3N4 layer as low-cost seeds to produce high-quality multi-crystalline silicon (mc-Si) ingot by full-melting process. The nucleation mechanism and its effects on minority carrier lifetime distribution, PL defects and oxygen concentration were studied. The results show that the incompletely melted silicon particles embedded in the Si3N4 layer can effectively nucleate fine grains with uniform size and few defects. The yield of experiment ingot can be significantly increased due to the quite short length of bottom red zone. Finally, the prepared solar cells can also achieve high conversion efficiency and show low light-induced degradation (LID) value.

中文翻译：

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利用嵌入在 Si3N4 层中的 Si 颗粒生长高质量多晶硅锭

摘要 本工作提出利用嵌入在 Si3N4 层中的 Si 颗粒作为低成本种子，通过全熔工艺生产高质量的多晶硅 (mc-Si) 锭。研究了成核机制及其对少数载流子寿命分布、PL缺陷和氧浓度的影响。结果表明，嵌入Si3N4层中的未完全熔化的硅颗粒可以有效地使尺寸均匀、缺陷少的细晶粒成核。由于底部红色区域的长度很短，因此可以显着提高实验锭的产量。最后，制备的太阳能电池还可以实现高转换效率和低光诱导降解（LID）值。