Abstract

The influence of the channel shape in a finned (vertical) field-effect transistor (FinFET) on the amplitude of random telegraph noise (RTN) induced by single interface trapped charge has been simulated for the transistors with rectangular and trapezoidal fin cross sections. It is established that, in a subthreshold region of gate voltages, a single charge trapped at the fin top induces RTN of lower amplitude in the case of a trapezoidal cross sections as compared to that in a transistor with rectangular cross sections. However, a single charge built in the middle of the fin side wall induces RTN of significantly higher amplitude in case of the fin with trapezoidal cross section.

中文翻译：

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单电荷接口陷阱对具有不同鳍形的FinFET中亚阈值漏极电流的影响

摘要

对于具有矩形和梯形鳍截面的晶体管，已经模拟了鳍式（垂直）场效应晶体管（FinFET）中的沟道形状对单界面俘获电荷引起的随机电报噪声（RTN）幅度的影响。可以确定的是，在梯形截面的情况下，与具有矩形截面的晶体管相比，在栅极电压的亚阈值区域中，在鳍顶部捕获的单个电荷感应出幅度较小的RTN。但是，在鳍片具有梯形横截面的情况下，在鳍片侧壁中部形成的单个电荷会产生显着更高幅度的RTN。