In the present work, Sr-doped ZnO (SZO) thin films were grown on heated glass substrates (250 °C) by the ultrasonic spray technique. The effect of strontium concentration on the structural and physical characteristics was studied. The molar ratio of strontium in the ultrasonically sprayed solution was varied from 0 to 5 at.%. Several characterization techniques have been investigated to analyze the SZO thin films. The X-ray diffraction results showed that the SZO thin films exhibited the hexagonal wurtzite structure of ZnO with a preferential orientation along (002) plane. Scanning electron microscope indicated that the surface morphology of the SZO thin films changed with the increase in Sr concentration. No impurity was present in all the SZO films which was confirmed by the elemental composition analysis. Moreover, Fourier transform infrared spectroscopy showed the chemical bonding of zinc oxide (ZnO) and confirmed the incorporation of the dopant into the ZnO lattice. From the UV–Vis studies, it was found that the optical band gap decreased from 3.34 to 3.04 eV by increasing Sr doping concentration. Measurements of the Hall Effect indicated that all the elaborated samples exhibited n type conductivity. From all the films studied, SZO (1 at.%) was the most suitable for applications in optoelectronic devices, where a large figure of merit was required.

中文翻译：

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锶掺杂对超声喷涂氧化锌薄膜特性的影响

在目前的工作中，Sr 掺杂的 ZnO (SZO) 薄膜通过超声波喷涂技术在加热的玻璃基板 (250 °C) 上生长。研究了锶浓度对结构和物理特性的影响。超声喷涂溶液中锶的摩尔比在 0 到 5 原子％之间变化。已经研究了几种表征技术来分析 SZO 薄膜。X射线衍射结果表明，SZO薄膜表现出ZnO的六方纤锌矿结构，沿（002）面优先取向。扫描电子显微镜表明，SZO 薄膜的表面形貌随着 Sr 浓度的增加而变化。通过元素组成分析证实，所有 SZO 膜中均不存在杂质。而且，傅里叶变换红外光谱显示氧化锌 (ZnO) 的化学键合，并证实掺杂剂掺入到 ZnO 晶格中。从 UV-Vis 研究中发现，通过增加 Sr 掺杂浓度，光学带隙从 3.34 eV 降低到 3.04 eV。霍尔效应的测量表明，所有精心制作的样品都表现出 n 型导电性。在所有研究的薄膜中，SZO (1 at.%) 最适合用于要求高品质因数的光电器件。霍尔效应的测量表明，所有精心制作的样品都表现出 n 型导电性。在所有研究的薄膜中，SZO (1 at.%) 最适合用于要求高品质因数的光电器件。霍尔效应的测量表明，所有精心制作的样品都表现出 n 型导电性。在所有研究的薄膜中，SZO (1 at.%) 最适合用于要求高品质因数的光电器件。