In this paper, the V2O5/Ge8Sb92 multilayer thin films were prepared and investigated. Compared with Ge8Sb92, V2O5/Ge8Sb92 film had a higher crystallization temperature and a larger conductivity activation energy. The surface roughness for V2O5/Ge8Sb92 film was small before and after crystallization. The crystallization of V2O5/Ge8Sb92 was inhibited and the grain size was only 5.0 nm. A higher stability and smaller grain made V2O5/Ge8Sb92 multilayer film a potential application in high-density phase change memory.

中文翻译：

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用于高数据保留和高速相变存储器应用的 V2O5/Ge8Sb92 多层薄膜的研究

在本文中，制备并研究了 V2O5/Ge8Sb92 多层薄膜。与Ge8Sb92相比，V2O5/Ge8Sb92薄膜具有更高的结晶温度和更大的导电活化能。V2O5/Ge8Sb92 薄膜在结晶前后的表面粗糙度很小。V2O5/Ge8Sb92 的结晶受到抑制，晶粒尺寸仅为 5.0 nm。更高的稳定性和更小的晶粒使 V2O5/Ge8Sb92 多层膜成为高密度相变存储器的潜在应用。