Quantification of Sodium‐Ion Migration in Silicon Nitride by Flatband‐Potential Monitoring at Device‐Operating Temperatures,Physica Status Solidi (A) - Applications and Materials Science

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Quantification of Sodium‐Ion Migration in Silicon Nitride by Flatband‐Potential Monitoring at Device‐Operating Temperatures
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-06-13 , DOI: 10.1002/pssa.202000212
Guillaume von Gastrow ₁ , Erick Martinez-Loran ₁ , Jonathan Scharf ₁ , Jacob Clenney ₂ , Rico Meier ₂ , Prabhakar Bandaru ₃ , Mariana I. Bertoni ₂ , David P. Fenning ₁

Affiliation

A trap‐corrected bias–temperature–stress (TraC‐BTS) method to quantify the kinetics of ion migration in dielectrics based on capacitance–voltage measurements is presented. The method is based on the extraction of flatband potential (V_fb) shifts in metal–insulator–semiconductor test structures an enables the reliability assessment of semiconductor dielectrics and solar cells. Herein, it is shown that carrier trapping in the dielectric must be accounted for, as it strongly affects the measurement of flatband potential in silicon‐nitride‐based capacitors. This effect is corrected by isolating the contribution of trapping on V_fb using contamination‐free control devices. A specific drift‐diffusion model of the ion kinetics presented herein allows the extraction of ion diffusivity. An Arrhenius relationship is obtained for sodium diffusivity in silicon nitride in a temperature range from 30 °C to 90 °C at an electric field of 1 MV cm⁻¹, yielding a prefactor

D_{0} = 1 \times 10^{- 14} {cm}^{2} s^{- 1}

and an activation energy

E_{a} = 0.14 eV

, with a 95% confidence interval of [

0.07,0.21

] eV for the diffusivity. These quantitative kinetics confirm that silicon nitride may be a poor sodium migration barrier under a significant electric field.

中文翻译：

在器件工作温度下通过带电势监测来量化氮化硅中的钠离子迁移

提出了一种陷阱校正的偏置-温度-应力（TraC-BTS）方法，用于基于电容-电压测量来量化电介质中离子迁移的动力学。该方法基于提取金属-绝缘体-半导体测试结构中的平带电势（V _fb）位移，从而能够评估半导体电介质和太阳能电池的可靠性。本文表明，必须考虑电介质中的载流子捕获，因为它会严重影响基于氮化硅的电容器中平带电势的测量。通过隔离陷获对V _fb的作用，可以纠正此影响使用无污染的控制设备。本文提供的特定的离子动力学漂移扩散模型可以提取离子扩散系数。在1 MV cm ^-1的电场下，在30°C至90°C的温度范围内，获得了氮化硅中钠扩散率的Arrhenius关系，从而产生了因子