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Heavy Alkali Treatment of Post‐Sulfurized Cu(In,Ga)Se2 Layers: Effect on Absorber Properties and Solar Cell Performance
Solar RRL ( IF 6.0 ) Pub Date : 2020-06-23 , DOI: 10.1002/solr.202000248 Jan Keller 1 , Oleksandr V. Bilousov 2 , Janet Neerken 3 , Erik Wallin 2 , Natalia M. Martin 1 , Lars Riekehr 1 , Marika Edoff 1 , Charlotte Platzer-Björkman 1
Solar RRL ( IF 6.0 ) Pub Date : 2020-06-23 , DOI: 10.1002/solr.202000248 Jan Keller 1 , Oleksandr V. Bilousov 2 , Janet Neerken 3 , Erik Wallin 2 , Natalia M. Martin 1 , Lars Riekehr 1 , Marika Edoff 1 , Charlotte Platzer-Björkman 1
Affiliation
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This contribution evaluates a sequential post‐deposition treatment of Cu(In,Ga)Se2 (CIGS) films, consisting of 1) a post‐sulfurization in elemental S‐atmosphere and 2) a subsequent treatment by heavy alkali fluorides (Alk‐PDT). First, the effect of the sulfurization step on the corresponding solar cell performance is investigated and optimum process parameters, leading to an efficiency improvement, are identified. Losses in carrier collection observed after S‐incorporation are attributed to an increased grain boundary (GB) recombination. It is found that the corresponding reduction in short‐circuit current density can be mitigated by a RbF‐ or KF‐PDT, supposedly by depleting GBs in Cu. However, in strong contrast to non‐sulfurized CIGS, the Alk‐PDT results in a lower open‐circuit voltage and distortions in the current–voltage (I–V) characteristics for sulfurized absorbers. Possible explanations are the absence of a wide‐gap surface phase and/or air exposure between the post‐treatment steps. It is further proposed that a back contact barrier may be responsible for the distortions in I–V.
中文翻译：
重碱处理后硫化的Cu（In，Ga）Se2层：对吸收剂性能和太阳能电池性能的影响
该贡献评估了Cu（In，Ga）Se 2的顺序沉积后处理（CIGS）薄膜，包括1）元素S大气中的后硫化和2）随后用重碱金属氟化物（Alk-PDT）处理。首先，研究了硫化步骤对相应太阳能电池性能的影响，并确定了可提高效率的最佳工艺参数。掺入S后观察到的载流子收集损失是由于晶界（GB）重组增加所致。发现通过RbF-或KF-PDT可以减轻短路电流密度的相应降低，据认为可以通过减少Cu中的GBs来实现。但是，与未硫化的CIGS形成鲜明对比的是，Alk-PDT导致较低的开路电压和电流-电压畸变（I – V）硫化吸收剂的特性。可能的解释是在后处理步骤之间没有宽间隙的表面相和/或空气暴露。进一步提出，背接触势垒可能是导致IV畸变的原因。
更新日期：2020-06-23
中文翻译：
重碱处理后硫化的Cu（In，Ga）Se2层：对吸收剂性能和太阳能电池性能的影响
该贡献评估了Cu（In，Ga）Se 2的顺序沉积后处理（CIGS）薄膜，包括1）元素S大气中的后硫化和2）随后用重碱金属氟化物（Alk-PDT）处理。首先，研究了硫化步骤对相应太阳能电池性能的影响，并确定了可提高效率的最佳工艺参数。掺入S后观察到的载流子收集损失是由于晶界（GB）重组增加所致。发现通过RbF-或KF-PDT可以减轻短路电流密度的相应降低，据认为可以通过减少Cu中的GBs来实现。但是，与未硫化的CIGS形成鲜明对比的是，Alk-PDT导致较低的开路电压和电流-电压畸变（I – V）硫化吸收剂的特性。可能的解释是在后处理步骤之间没有宽间隙的表面相和/或空气暴露。进一步提出，背接触势垒可能是导致IV畸变的原因。
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